Method for manufacturing nano-gap electrode device

Invention Grant

US07138331B2 Method for manufacturing nano-gap electrode device 失效

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Patent Title: Method for manufacturing nano-gap electrode device
Application No.: US10800704

Application Date: 2004-03-16
Publication No.: US07138331B2

Publication Date: 2006-11-21
Inventor: Chan Woo Park , Sung Yool Choi , Sang Ouk Ryu , Han Young Yu , Ung Hwan Pi , Tae Hyoung Zyung
Applicant: Chan Woo Park , Sung Yool Choi , Sang Ouk Ryu , Han Young Yu , Ung Hwan Pi , Tae Hyoung Zyung
Applicant Address: KR Daejon-Shi
Assignee: Electronics and Telecommunications Research Institute
Current Assignee: Electronics and Telecommunications Research Institute
Current Assignee Address: KR Daejon-Shi
Agency: Mayer, Brown, Rowe & Maw LLP
Priority: KR10-2003-0082418 20031120
Main IPC: H01L21/4763
IPC: H01L21/4763

Method for manufacturing nano-gap electrode device

Abstract:

Provided is a method for manufacturing a nano-gap electrode device comprising the steps of: forming a first electrode on a substrate; forming a spacer on a sidewall of the first electrode; forming a second electrode on an exposed substrate at a side of the spacer; and forming a nano-gap between the first electrode and the second electrode by removing the spacer, whereby it is possible to control the nano-gap position, width, shape, and etc., reproducibly, and manufacture a plurality of nano-gap electrode devices at the same time.

Public/Granted literature

US20050112860A1 Method for manufacturing nano-gap electrode device Public/Granted day:2005-05-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）