公开(公告)号：USRE45356E1

公开(公告)日：2015-02-03

申请号：US13161932

申请日：2011-06-16

申请人： Sung Min Yoon ,  Nam Yeal Lee ,  Sang Ouk Ryu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Byoung Gon Yu

发明人： Sung Min Yoon ,  Nam Yeal Lee ,  Sang Ouk Ryu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Byoung Gon Yu

IPC分类号： H01L29/08

CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/143 ,  H01L45/1625 ,  H01L45/1675 ,  H01L45/1683

摘要： Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.

公开(公告)号：US07138331B2

公开(公告)日：2006-11-21

申请号：US10800704

申请日：2004-03-16

申请人： Chan Woo Park ,  Sung Yool Choi ,  Sang Ouk Ryu ,  Han Young Yu ,  Ung Hwan Pi ,  Tae Hyoung Zyung

发明人： Chan Woo Park ,  Sung Yool Choi ,  Sang Ouk Ryu ,  Han Young Yu ,  Ung Hwan Pi ,  Tae Hyoung Zyung

IPC分类号： H01L21/4763

CPC分类号： H01L51/0023 ,  B82Y10/00 ,  H01L51/0595 ,  Y10S977/78 ,  Y10S977/781 ,  Y10S977/784 ,  Y10S977/932

摘要： Provided is a method for manufacturing a nano-gap electrode device comprising the steps of: forming a first electrode on a substrate; forming a spacer on a sidewall of the first electrode; forming a second electrode on an exposed substrate at a side of the spacer; and forming a nano-gap between the first electrode and the second electrode by removing the spacer, whereby it is possible to control the nano-gap position, width, shape, and etc., reproducibly, and manufacture a plurality of nano-gap electrode devices at the same time.

公开(公告)号：US07105819B2

公开(公告)日：2006-09-12

申请号：US10788340

申请日：2004-03-01

申请人： Sang Ouk Ryu ,  Seong Mok Cho ,  Kwi Dong Kim ,  Byoung Gon Yu

发明人： Sang Ouk Ryu ,  Seong Mok Cho ,  Kwi Dong Kim ,  Byoung Gon Yu

IPC分类号： G01J5/00

CPC分类号： G01J5/02 ,  G01J5/023 ,  G01J5/08 ,  G01J5/0853 ,  G01J5/10 ,  G01J5/34

摘要： The present invention relates to a pyroelectric infrared ray sensor fabricated by using MEMS processes, wherein an infrared ray absorption layer disposed on the most top portion of the infrared ray sensor assembly is formed with a silicon oxide film (SiO2) to exhibit an excellent absorption efficiency with respect to the infrared wavelength band of 8 to 12 mm and function as a protective film for a sensor pixel. In addition, an infrared ray absorption layer, support arms and posts are formed in a single body to allow the sensor assembly to be robust and fabricating processes to be remarkably reduced to increase a process yield.

摘要翻译： 本发明涉及通过使用MEMS工艺制造的热释电红外线传感器，其中设置在红外线传感器组件的最上部的红外线吸收层由氧化硅膜（SiO 2） >）相对于8〜12mm的红外波段具有优异的吸收效率，并且用作传感器像素的保护膜。 此外，在单个体中形成红外线吸收层，支撑臂和柱，以使传感器组件牢固，并且显着减少制造工艺以增加工艺成品率。

公开(公告)号：US20080237564A1

公开(公告)日：2008-10-02

申请号：US12063991

申请日：2006-08-30

申请人： Sung Min Yoon ,  Nam Yeal Lee ,  Sang Ouk Ryu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Byoung Gon Yu

发明人： Sung Min Yoon ,  Nam Yeal Lee ,  Sang Ouk Ryu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Byoung Gon Yu

IPC分类号： H01L47/00 ,  H01L21/00

CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/143 ,  H01L45/1625 ,  H01L45/1675 ,  H01L45/1683

摘要： Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.

摘要翻译： 提供了使用具有低熔点和高结晶速度的相变材料的相变存储器件及其制造方法。 相变存储器件包括与发热电极层接触的锑（Sb） - 硒（Se）硫属元素化物Sb>> 100-x>相变材料层 通过孔暴露并填充孔。 由于在相变材料层中使用Sb Se <100> x 比GST更高速度，低功耗的相变存储器件 可以制造存储器件。

公开(公告)号：US20110065246A1

公开(公告)日：2011-03-17

申请号：US12942255

申请日：2010-11-09

申请人： Seung-Yun LEE ,  Sang ouk RYU ,  Sung Min YOON ,  Young Sam PARK ,  Kyu-Jeong CHOI ,  Nam-Yeal LEE ,  Byoung-Gon YU

发明人： Seung-Yun LEE ,  Sang ouk RYU ,  Sung Min YOON ,  Young Sam PARK ,  Kyu-Jeong CHOI ,  Nam-Yeal LEE ,  Byoung-Gon YU

IPC分类号： H01L21/8249

CPC分类号： H01L27/0635 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/008 ,  G11C2213/79 ,  H01L21/8249 ,  H01L27/2445 ,  H01L45/06 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  Y10S438/947

摘要： An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.

摘要翻译： 提供了高性能多功能SOC所需的嵌入式存储器及其制造方法。 存储器包括在衬底上相邻并电连接的双极晶体管，相变存储器件和MOS晶体管。 双极晶体管包括由设置在集电极上的SiGe组成的基极。 相变存储器件具有通过电流从非晶状态转变为结晶态的相变材料层和由与相变材料层的下表面接触的SiGe构成的加热层。

公开(公告)号：US07547913B2

公开(公告)日：2009-06-16

申请号：US12063991

申请日：2006-08-30

申请人： Sung Min Yoon ,  Nam Yeal Lee ,  Sang Ouk Ryu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Byoung Gon Yu

发明人： Sung Min Yoon ,  Nam Yeal Lee ,  Sang Ouk Ryu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Byoung Gon Yu

IPC分类号： H01L29/08

CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/143 ,  H01L45/1625 ,  H01L45/1675 ,  H01L45/1683

摘要： Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.

摘要翻译： 提供了使用具有低熔点和高结晶速度的相变材料的相变存储器件及其制造方法。 相变记忆装置包括与通过孔露出并填充孔的发热电极层接触的锑（Sb） - 硒（Se）硫族化物SbxSe100-x相变材料层。 由于在相变材料层中使用SbxSe100-x，所以可以制造比GST存储器件更高速，更低功耗的相变存储器件。

公开(公告)号：US07413973B2

公开(公告)日：2008-08-19

申请号：US11510608

申请日：2006-08-28

申请人： Chan Woo Park ,  Sung Yool Choi ,  Sang Ouk Ryu ,  Han Young Yu ,  Ung Hwan Pi ,  Tae Hyoung Zyung

发明人： Chan Woo Park ,  Sung Yool Choi ,  Sang Ouk Ryu ,  Han Young Yu ,  Ung Hwan Pi ,  Tae Hyoung Zyung

IPC分类号： H01L21/44

CPC分类号： H01L51/0023 ,  B82Y10/00 ,  H01L51/0595 ,  Y10S977/78 ,  Y10S977/781 ,  Y10S977/784 ,  Y10S977/932

摘要： Provided is a method for manufacturing a nano-gap electrode device comprising the steps of: forming a first electrode on a substrate; forming a spacer on a sidewall of the first electrode; forming a second electrode on an exposed substrate at a side of the spacer; and forming a nano-gap between the first electrode and the second electrode by removing the spacer, whereby it is possible to control the nano-gap position, width, shape, and etc., reproducibly, and manufacture a plurality of nano-gap electrode devices at the same time.

摘要翻译： 提供一种纳米间隙电极器件的制造方法，包括以下步骤：在衬底上形成第一电极; 在所述第一电极的侧壁上形成间隔物; 在所述间隔物的一侧的暴露的基板上形成第二电极; 并且通过去除间隔物在第一电极和第二电极之间形成纳米间隙，从而可以可再现地控制纳米间隙位置，宽度，形状等，并且制造多个纳米间隙电极 设备同时进行。