Methods of forming electronic devices including dielectric layers with different densities of titanium

Invention Grant

US07144771B2 Methods of forming electronic devices including dielectric layers with different densities of titanium 失效

Title translation: 形成电子器件的方法包括具有不同密度钛的电介质层

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Patent Title: Methods of forming electronic devices including dielectric layers with different densities of titanium
Patent Title (中): 形成电子器件的方法包括具有不同密度钛的电介质层
Application No.: US10616056

Application Date: 2003-07-09
Publication No.: US07144771B2

Publication Date: 2006-12-05
Inventor: Gab-jin Nam , Seung-hwan Lee , Ki-chul Kim , Jae-soon Lim , Sung-tae Kim , Young-sun Kim
Applicant: Gab-jin Nam , Seung-hwan Lee , Ki-chul Kim , Jae-soon Lim , Sung-tae Kim , Young-sun Kim
Applicant Address: KR Kyungki-Do
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Kyungki-Do
Agency: Myers Bigel Sibley & Sajovec
Priority: KR10-2002-0063024 20021016
Main IPC: H01L21/8242
IPC: H01L21/8242

Methods of forming electronic devices including dielectric layers with different densities of titanium

Abstract:

Methods of forming an electronic device include providing a fist electrode, providing a dielectric oxide layer on the first electrode, and providing a second electrode on the dielectric oxide layer so that the dielectric oxide layer is between the first and second electrodes. More particularly, a first portion of the dielectric oxide layer adjacent the first electrode can have a first density of titanium, and a second portion of the dielectric oxide layer opposite the first electrode can have a second density of titanium different than the first density. Related structures are also discussed.

Abstract(Chinese):

形成电子器件的方法包括提供第一电极，在第一电极上提供电介质氧化物层，并在电介质氧化物层上提供第二电极，使得电介质氧化物层位于第一和第二电极之间。更具体地，与第一电极相邻的电介质氧化物层的第一部分可以具有第一密度的钛，并且与第一电极相对的电介质氧化物层的第二部分可具有不同于第一密度的钛的第二密度。还讨论了相关结构。

Public/Granted literature

US20040075130A1 Methods of forming electronic devices including dielectric layers with different densities of titanium and related structures Public/Granted day:2004-04-22

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）