Abstract:
A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.
Abstract:
A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of AlxGa1-xN (0.01≦x≦0.04), and a light emitting structure formed on the anti-bowing layer and including a first conductivity-type nitride semiconductor layer, an active layer, and a second conductivity-type nitride semiconductor layer.
Abstract translation:氮化物系半导体发光元件包括具有Al x Ga 1-x N(0.01& N e; x& In; 0.04)的组成的抗弯曲层,以及形成在抗弯曲层上并包括第一导电型氮化物 半导体层,有源层和第二导电型氮化物半导体层。
Abstract:
A semiconductor light emitting device includes a substrate, a plurality of light emitting cells, a connection part, and a concavo-convex part. The light emitting cells are arrayed on the top surface of the substrate. Each of the light emitting cells has a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer that are sequentially stacked on the top surface of the substrate. The connection part is formed to connect the light emitting cells in series, parallel or series-parallel. The concavo-convex part is formed in at least one of the bottom surface of the substrate and the top surface of an isolation region between the light emitting cells.
Abstract:
A metal-organic chemical vapor deposition (MOCVD) apparatus includes: a reaction chamber including a chamber main body forming an interior space having a certain volume and a chamber cover hermetically sealing the chamber main body to maintain air-tightness; a susceptor rotatably provided within the chamber main body and having one or more accommodation portions formed in an upper surface thereto to accommodate wafers; a cover member detachably provided on an interior surface of the chamber cover, forming a reaction space between the cover member and the susceptor, and formed by coupling a plurality of section members; and a gas supply unit supplying a reactive gas to the reaction space to allow the reactive gas to flow between the susceptor and the cover member.
Abstract:
There is provided a semiconductor light emitting device having improved light emitting efficiency by increasing an inflow of holes into an active layer while preventing an overflow of electrons. The semiconductor light emitting device includes an n-type semiconductor layer; an active layer formed on the n-type semiconductor layer and including at least one quantum well layer and at least one quantum barrier layer alternately stacked therein; an electron blocking layer formed on the active layer and having at least one multilayer structure including three layers having different energy band gaps stacked therein, a layer adjacent to the active layer among the three layers having an inclined energy band structure; and a p-type semiconductor layer formed on the electron blocking layer.
Abstract:
A method for transmitting feedback information for cooperative transmission in a wireless communication cellular system comprises: receiving information on cells that can be cooperatively transmitted from a base station; determining cells that prefer the cooperative transmission among the cells that can be cooperatively transmitted; generating feedback information, which includes a preference cell indicator representing preferred cells and non-preferred cells for the cooperative transmission among the cells that can be cooperatively transmitted, precoding matrix information for the respective cell that can be cooperatively transmitted, phase information representing a phase correction value of each of the preferred cells for the cooperative transmission, and a channel quality indicator; and transmitting the feedback information through a control channel or a data channel. Accordingly, the present invention provides a method and apparatus for transmitting and receiving a report of implicative feedback information on code books that can be designed for the gain improvement of a high-level inter-cell cooperative transmission.
Abstract:
The present invention provides an inductive angle sensor with improved common mode noise rejection and a signal processing method of the same, which can improve electromagnetic compatibility (EMC) characteristics and obtain an accurate output value by eliminating common mode noise. The signal processing method includes adding signals obtained from a pair of receiver coils by an adder, subtracting the signal obtained from one of the pair of receiver coils from the signal obtained from the other receiver coil by a subtracter, multiplying the value obtained from the adder by the value obtained from the subtracter by a first multiplier, multiplying the value obtained from the subtracter by itself by a second multiplier, and dividing the value obtained from the first multiplier by the value obtained from the second multiplier by a divider.
Abstract:
Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers.
Abstract:
A semiconductor light emitting device includes: a semiconductor light emission stacked body including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer positioned between the first and second conductive semiconductor layers; and a highly conductive transparent electrode formed on at least one of the first and second conductive semiconductor layers and including a transparent electrode layer formed of at least one of a transparent conductive oxide layer and a transparent conductive nitride and a graphene layer allowing light within the visible spectrum to be transmitted therethrough, the transparent electrode layer and the graphene layer being stacked.
Abstract:
The optical system includes: a first optical group which performs a zoom function using a first movable lens, a second optical group which performs a focus function using a second movable lens, and a third optical group which performs a wide angle function by reflecting light passing through the first optical group and the second optical group, wherein a first intermediate image is formed between the first optical group and the second optical group.