发明授权
US07144772B2 Semiconductor devices having capacitors of metal-insulator-metal structure with coextensive oxidation barrier pattern and lower electrode bottom and methods of forming the same
失效
具有金属 - 绝缘体 - 金属结构的电容器,具有共同的氧化屏障图案和下部电极底部的半导体器件及其形成方法
- 专利标题: Semiconductor devices having capacitors of metal-insulator-metal structure with coextensive oxidation barrier pattern and lower electrode bottom and methods of forming the same
- 专利标题(中): 具有金属 - 绝缘体 - 金属结构的电容器,具有共同的氧化屏障图案和下部电极底部的半导体器件及其形成方法
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申请号: US10650344申请日: 2003-08-28
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公开(公告)号: US07144772B2公开(公告)日: 2006-12-05
- 发明人: Sung-Yung Lee , Nak-Won Jang , Heung-Jin Joo
- 申请人: Sung-Yung Lee , Nak-Won Jang , Heung-Jin Joo
- 申请人地址: KR Suwon
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon
- 代理机构: Myers Bigel Sibley & Sajovec PA
- 优先权: KR10-2002-0066520 20021030
- 主分类号: H01L21/8242
- IPC分类号: H01L21/8242
摘要:
A semiconductor device having MIM capacitors is configured so that the bottom surface of the lower electrode and a top surface area of an oxidation barrier pattern are substantially equal. Related methods for forming the device are also described.