发明授权
US07145793B1 Electrically addressable memory switch 失效
电可寻址存储器开关

Electrically addressable memory switch
摘要:
A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control electrode is provided for controlling an electric field applied to the active region, which switches between a high-impedance state and a low-impedance state when the electrical field having a predetermined polarity and intensity is applied for a predetermined time.
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