发明授权
- 专利标题： Process for production of semiconductor substrate
- 专利标题（中）： 半导体基板的制造方法
-
申请号： US09161774申请日： 1998-09-29
-
公开(公告)号： US07148119B1公开(公告)日： 2006-12-12
- 发明人: Kiyofumi Sakaguchi , Takao Yonehara
- 申请人： Kiyofumi Sakaguchi , Takao Yonehara
- 申请人地址： JP Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP6-39389 19940310; JP7-45441 19950306
- 主分类号： H01L23/12
- IPC分类号： H01L23/12
摘要：
A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.
信息查询
IPC分类:
