Invention Grant
US07151286B2 Photodiode having three doped regions, photodetector incorporating such a photodiode and method of operating such a photodetector 有权
具有三个掺杂区域的光电二极管,包含这种光电二极管的光电检测器和操作这种光电检测器的方法

  • Patent Title: Photodiode having three doped regions, photodetector incorporating such a photodiode and method of operating such a photodetector
  • Patent Title (中): 具有三个掺杂区域的光电二极管,包含这种光电二极管的光电检测器和操作这种光电检测器的方法
  • Application No.: US10875694
    Application Date: 2004-06-24
  • Publication No.: US07151286B2
    Publication Date: 2006-12-19
  • Inventor: Francois Roy
  • Applicant: Francois Roy
  • Applicant Address: FR Montrouge
  • Assignee: STMicroelectronics S.A.
  • Current Assignee: STMicroelectronics S.A.
  • Current Assignee Address: FR Montrouge
  • Agency: Seed IP Law Group PLLC
  • Agent Lisa K. Jorgenson; David V. Carlson
  • Priority: FR0308326 20030708
  • Main IPC: H01L31/113
  • IPC: H01L31/113
Photodiode having three doped regions, photodetector incorporating such a photodiode and method of operating such a photodetector
Abstract:
A photodiode comprises three superposed doped regions, namely a first doped region adjacent to a surface (S) of a semiconductor substrate, an intermediate second doped region and a third doped region in contact with the bulk of the substrate. The bulk of the substrate and the second doped region form first and second electrodes of the photodiode, respectively. The photodiode furthermore includes a third electrode in contact with the first doped region. The third electrode comprises an intermediate portion of a first electrically conducting material, placed in contact with the first doped region, and an external connection portion of a second electrically conducting material, placed in contact with the intermediate portion.
Information query
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L31/00 对红外辐射、光、较短波长的电磁辐射,或微粒辐射敏感的,并且专门适用于把这样的辐射能转换为电能的,或者专门适用于通过这样的辐射进行电能控制的半导体器件;专门适用于制造或处理这些半导体器件或其部件的方法或设备;其零部件(H01L51/42优先;由形成在一共用衬底内或其上的多个固态组件,而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00)
H01L31/08 .其中的辐射控制通过该器件的电流的,例如光敏电阻器
H01L31/10 ..特点在于至少有一个电位跃变势垒或表面势垒的,例如光敏晶体管
H01L31/101 ...对红外、可见或紫外辐射敏感的器件
H01L31/112 ....以场效应工作为特征的,如结型场效应光敏晶体管
H01L31/113 .....为导体—绝缘体—半导体型的,如金属—绝缘体—半导体场效应晶体管
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