Invention Grant
US07151286B2 Photodiode having three doped regions, photodetector incorporating such a photodiode and method of operating such a photodetector
有权
具有三个掺杂区域的光电二极管,包含这种光电二极管的光电检测器和操作这种光电检测器的方法
- Patent Title: Photodiode having three doped regions, photodetector incorporating such a photodiode and method of operating such a photodetector
- Patent Title (中): 具有三个掺杂区域的光电二极管,包含这种光电二极管的光电检测器和操作这种光电检测器的方法
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Application No.: US10875694Application Date: 2004-06-24
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Publication No.: US07151286B2Publication Date: 2006-12-19
- Inventor: Francois Roy
- Applicant: Francois Roy
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR Montrouge
- Agency: Seed IP Law Group PLLC
- Agent Lisa K. Jorgenson; David V. Carlson
- Priority: FR0308326 20030708
- Main IPC: H01L31/113
- IPC: H01L31/113

Abstract:
A photodiode comprises three superposed doped regions, namely a first doped region adjacent to a surface (S) of a semiconductor substrate, an intermediate second doped region and a third doped region in contact with the bulk of the substrate. The bulk of the substrate and the second doped region form first and second electrodes of the photodiode, respectively. The photodiode furthermore includes a third electrode in contact with the first doped region. The third electrode comprises an intermediate portion of a first electrically conducting material, placed in contact with the first doped region, and an external connection portion of a second electrically conducting material, placed in contact with the intermediate portion.
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