发明授权
- 专利标题： Test pattern, inspection method, and device manufacturing method
- 专利标题（中）： 测试模式，检验方法和器件制造方法
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申请号： US10696742申请日： 2003-10-30
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公开(公告)号： US07151594B2公开(公告)日： 2006-12-19
- 发明人: Arie Jeffrey Den Boef , Hans Van Der Laan , Antonius Johannes Josephus Van Dijsseldonk , Mircea Dusa , Antoine Gaston Marie Kiers
- 申请人： Arie Jeffrey Den Boef , Hans Van Der Laan , Antonius Johannes Josephus Van Dijsseldonk , Mircea Dusa , Antoine Gaston Marie Kiers
- 申请人地址： NL Veldhoven
- 专利权人： ASML Netherlands B.V.
- 当前专利权人： ASML Netherlands B.V.
- 当前专利权人地址： NL Veldhoven
- 代理机构： Pillsbury Winthrop Shaw Pittman, LLP
- 优先权： EP02257609 20021101
- 主分类号： G01B9/00
- IPC分类号： G01B9/00
摘要：
In a method according to one embodiment of the invention, aberrations in a lithographic apparatus are detected by printing a test pattern having at least one degree of symmetry and being sensitive to a particular aberration in the apparatus, and using a scatterometer to derive information concerning the aberration. The test structure may comprise a two-bar grating, in which case the inner and outer duty ratios can be reconstructed to derive information indicative of comatic aberration. Alternatively, a hexagonal array of dots can be used, such that scatterometry data can be used to reconstruct dot diameters indicative of 3-wave aberration.
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