- 专利标题: Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof
-
申请号: US10254013申请日: 2002-09-25
-
公开(公告)号: US07153359B2公开(公告)日: 2006-12-26
- 发明人: Masashi Maekawa , Keiichi Fukuyama , Michinori Iwai , Kohei Tanaka
- 申请人: Masashi Maekawa , Keiichi Fukuyama , Michinori Iwai , Kohei Tanaka
- 申请人地址: JP Osaka
- 专利权人: Sharp Kabushiki Kaisha
- 当前专利权人: Sharp Kabushiki Kaisha
- 当前专利权人地址: JP Osaka
- 代理机构: Nixon & Vanderhye P.C.
- 优先权: JP2001-292538 20010925; JP2001-394826 20011226; JP2002-111298 20020412; JP2002-223124 20020731
- 主分类号: C30B13/28
- IPC分类号: C30B13/28
摘要:
A crystalline semiconductor film, the crystalline semiconductor film being formed over an insulative substrate, and including semiconductor crystal grains laterally grown along a surface of the insulative substrate, wherein the laterally-grown semiconductor crystal grains are in contact with each other at grain boundaries, and a distance between adjacent grain boundaries is equal to or smaller than two times a lateral growth distance of the semiconductor crystal grains.
公开/授权文献
信息查询
IPC分类: