公开(公告)号：US06225197B1

公开(公告)日：2001-05-01

申请号：US09465238

申请日：1999-12-15

申请人： Masashi Maekawa

发明人： Masashi Maekawa

IPC分类号： H01L2120

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02686 ,  H01L21/2022 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/78675

摘要： A method for annealing amorphous silicon film to produce polycrystalline film suitable for thin-film transistors fabricated on glass substrates is provided. The method involves using nickel to help induce the crystallization. The method also uses a high temperature, for a short period of time, to anneal the amorphous silicon. A one-step annealing process implants nickel ions, having a dosage of approximately 1×1015 ions/cm2, into the silicon before annealing. A two-step annealing process is also provided in which a thin nickel film is put in close proximity to the amorphous silicon film. A first, low temperature, anneal converts a portion of the films to nickel silicide. A second, high temperature, anneal uses the silicide to induce the amorphous film to crystallize. A TFT polycrystalline film made by the above mentioned process of using nickel and, either a one, or two-step high temperature annealing to induce crystallization is also provided.

摘要翻译： 提供了一种使非晶硅膜退火以制造适用于在玻璃基板上制造的薄膜晶体管的多晶膜的方法。 该方法包括使用镍来帮助诱导结晶。 该方法还使用高温度短时间来退火非晶硅。 一步退火工艺在退火之前将大约1×10 15个离子/ cm 2剂量的镍离子注入到硅中。 还提供了两步退火工艺，其中薄镍膜被放置在非晶硅膜附近。 首先，低温退火将一部分薄膜转化为硅化镍。 第二个高温退火使用硅化物来诱导非晶膜结晶。 还提供了通过上述使用镍的方法制成的TFT多晶膜，并且还提供了一步或两步高温退火以诱导结晶。

公开(公告)号：US5950078A

公开(公告)日：1999-09-07

申请号：US934347

申请日：1997-09-19

申请人： Masashi Maekawa ,  Jer-shen Maa

发明人： Masashi Maekawa ,  Jer-shen Maa

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/00 ,  H01L21/76

CPC分类号： H01L29/66757 ,  H01L21/2022

摘要： A method for rapid thermally annealing a thin amorphous film on a transparent substrate with the use of a radiation absorption film is provided. Unlike a transmissive silicon thin film, or transparent substrate, the metal absorptive film has excellent radiation absorption characteristics. When a radiation absorption layer is added to the substrate it is possible to rapidly anneal an amorphous silicon film with convention IC process radiation lamps. The metal absorption film also acts to conduct the heat to the amorphous silicon. The control provided by the choice of metal material, metal thickness, the oxidation of the metal surface, and the heat and duration of the RTA process provide unique opportunities to control the crystallization process. Polysilicon made by the above-described method has the potential of high electron mobility and low production costs. A thin-film structure for use in a TFT, made through the above-described method, is also provided.

摘要翻译： 提供了使用辐射吸收膜在透明基板上快速热退火薄非晶膜的方法。 与透射硅薄膜或透明基板不同，金属吸收膜具有优异的辐射吸收特性。 当向衬底添加辐射吸收层时，可以用常规IC工艺辐射灯快速退火非晶硅膜。 金属吸收膜还用于将热量传导到非晶硅。 通过金属材料的选择，金属厚度，金属表面的氧化以及RTA工艺的热和持续时间提供的控制提供了控制结晶过程的独特机会。 通过上述方法制造的多晶硅具有高电子迁移率和低生产成本的潜力。 还提供了通过上述方法制造的用于TFT的薄膜结构。

公开(公告)号：US5868953A

公开(公告)日：1999-02-09

申请号：US551126

申请日：1995-10-31

申请人： Masashi Maekawa ,  Nobuo Kawasaki ,  Yasuyuki Kawashima ,  Yoshio Karasawa

发明人： Masashi Maekawa ,  Nobuo Kawasaki ,  Yasuyuki Kawashima ,  Yoshio Karasawa

IPC分类号： B24B37/00 ,  C03C10/00 ,  C03C10/14 ,  C03C19/00 ,  C09K3/14 ,  G11B5/73 ,  G11B5/82 ,  G11B5/84 ,  B44C1/22

CPC分类号： G11B5/8404 ,  C03C10/0009 ,  C03C19/00 ,  C09K3/1409

摘要： A method for manufacturing a magnetic disk substrate includes a step of polishing a glass-ceramic having a crystal phase consisting of crystal grains having an average diameter of less than 3 .mu.m with a polishing material having a grain diameter smaller than the diameter of the crystal grain. In one aspect of the invention, the glass-ceramic includes lithium disilicate (Li.sub.2 O--2SiO.sub.2) and alpha-quartz (alpha-SiO.sub.2) as predominant crystal phases and grown crystal grains of the alpha-quartz each have a globular grain structure consisting of aggregated particles and have a diameter within a range of 0.3 .mu.m-3.0 .mu.m.

摘要翻译： 一种磁盘基板的制造方法，其特征在于，使用具有比晶体直径小的研磨材料研磨具有平均粒径小于3μm的结晶相的结晶相的玻璃陶瓷的工序 粮食。 在本发明的一个方面，玻璃陶瓷包括二硅酸锂（Li 2 O-2SiO 2）和α-石英（α-SiO 2）作为主要结晶相，并且α-石英的生长晶粒各自具有由聚集的 颗粒，直径在0.3μm-3.0μm的范围内。

公开(公告)号：US4506315A

公开(公告)日：1985-03-19

申请号：US447885

申请日：1982-12-08

申请人： Masashi Maekawa ,  Tatsumi Hasegawa

发明人： Masashi Maekawa ,  Tatsumi Hasegawa

IPC分类号： F21V7/00 ,  F21V29/15

CPC分类号： F21S48/1376 ,  F21S48/1172 ,  F21S48/32

摘要： A vehicle headlamp comprises a reflector having a reflecting parabolic face, and a lens made of synthetic resin and attached to the front end of said reflector. The vehicle headlamp further includes a lamp held by said reflector, at least one filament in said lamp positioned ahead the focussing point of said reflector, and a zone formed on the reflecting face where a means is arranged to reduce the amount of light coming from the filament onto the lens at an upper area thereof, said zone being positioned above the lamp and along an axis vertically passing through an optical axis. Said light reducing means is intended to reflect light either irregularly or diffusedly. The irregularly reflecting means comprises using no undercoat which serves to make the reflecting coat flat and smooth, or making the reflector body rough and uneven and then applying reflecting coat onto this rough and uneven portion with the undercoat interposed therebetween. The diffusedly reflecting means comprises forming slanted faces on the inner face of said reflector body and applying the reflecting coat onto these slanted faces with the undercoat interposed therebetween.

摘要翻译： 车辆前照灯包括具有反射抛物面的反射器和由合成树脂制成并附接到所述反射器的前端的透镜。 车辆前照灯还包括由所述反射器保持的灯，所述灯中的至少一根灯丝定位在所述反射器的聚焦点的前方，以及形成在反射面上的区域，其中布置有用于减少来自所述反射器的光的量 灯丝在其上部区域处的透镜上，所述区域位于灯的上方并且沿着垂直穿过光轴的轴线。 所述减光装置旨在不规则地或漫射地反射光。 不规则反射装置包括不使用底涂层，其使反射涂层平坦光滑，或者使反射体粗糙和不均匀，然后将反射涂层涂在该粗糙和不平坦部分上，其中底涂层。 扩散反射装置包括在所述反射器主体的内表面上形成倾斜面并将反射涂层施加到这些倾斜面上，其中底漆被插入其间。

公开(公告)号：US5940693A

公开(公告)日：1999-08-17

申请号：US893285

申请日：1997-07-15

申请人： Masashi Maekawa

发明人： Masashi Maekawa

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L21/324

CPC分类号： H01L29/78618 ,  H01L21/2022 ,  H01L29/41733 ,  H01L29/66757

摘要： A method for annealing amorphous silicon film to produce polycrystalline film suitable for thin-film transistors fabricated on glass substrates is provided. The method involves using the selective location of nickel on a predetermined region of silicon to define the pattern of the lateral growth front as the silicon is crystallized. The method defines the resistivity of the silicide formed. The method also defines a specific range of nickel thicknesses to form the nickel silicide. A minimum thickness ensures that a continuous layer of nickel silicide exists on the growth front to promote an isotropic lateral growth front to form a crystalline film having high electron mobility. A maximum thickness limit reduces the risk of nickel silicide enclaves in the crystalline film to degrade the leakage current. Strategic placement of the nickel helps prevent nickel silicide contamination of the transistor channel regions, which degrade the leakage current. A TFT polycrystalline film is also provided made by the above mentioned process of using a defined thickness, silicide resisitivity, and placement of nickel on amorphous silicon to form a silicide which induces a controlled crystallization growth front.

摘要翻译： 提供了一种使非晶硅膜退火以制造适用于在玻璃基板上制造的薄膜晶体管的多晶膜的方法。 该方法包括在硅的预定区域上使用镍的选择性位置以在硅结晶时限定横向生长前沿的图案。 该方法定义了形成的硅化物的电阻率。 该方法还定义了镍厚度的特定范围以形成硅化镍。 最小厚度确保在生长前沿上存在连续的硅化镍层以促进各向同性横向生长前沿以形成具有高电子迁移率的结晶膜。 最大厚度限制降低了结晶膜中的硅化镍包层的风险，以降低漏电流。 镍的策略放置有助于防止晶体管沟道区域的硅化镍污染，这会降低漏电流。 还提供了通过使用规定的厚度，硅化物电阻率和在非晶硅上放置镍以形成引起受控结晶生长前沿的硅化物的上述方法制造的TFT多晶膜。

公开(公告)号：US5561089A

公开(公告)日：1996-10-01

申请号：US508490

申请日：1995-07-28

申请人： Futoshi Ishizaki ,  Naoyuki Goto ,  Masashi Maekawa

发明人： Futoshi Ishizaki ,  Naoyuki Goto ,  Masashi Maekawa

IPC分类号： C03C10/04 ,  C03C10/00 ,  G11B5/73 ,  G11B11/105 ,  C03C3/087 ,  C03C3/093

CPC分类号： G11B11/10582 ,  C03C10/0045 ,  G11B11/10584 ,  G11B11/10586 ,  G11B5/7315

摘要： Glass-ceramic for information recording disks have a crystalline structure suitably used for substrate materials and the like for magnetic disks and magneto-optic disks as well as have improved surface characteristics obtained by polishing the glass, and besides the base glass thereof is excellent in melting properties and moldability thereof. The base glass composition consists essentially of ingredients of SiO.sub.2 -Al.sub.2 O.sub.3 -ZnO-MgO-CaO-SrO-BaO-TiO.sub.2 system. The main crystalline phase of the glass-ceramic produced by heat-treating the base glass having a viscosity of log .eta.=3.0 poise or less at 1250.degree. C. is gahnite, a size of the crystal grain is within a range of from 50 to 1000 Angstrom, and a degree of surface roughness (Ra) of the polished glass-ceramic is within a range of from 0.5 to 9.0 Angstrom.

摘要翻译： 用于信息记录盘的玻璃陶瓷具有适用于磁盘和磁光盘的基板材料等的晶体结构，并且具有通过研磨玻璃而获得的改进的表面特性，此外，其基础玻璃的熔融性优异 性能和成型性。 基础玻璃组合物基本上由SiO 2 -Al 2 O 3 -ZnO-MgO-CaO-SrO-BaO-TiO 2体系的成分组成。 通过在1250℃下对log eta = 3.0泊或更小的粘度进行热处理制备的玻璃陶瓷的主结晶相是霰石，晶粒尺寸在50〜 抛光玻璃 - 陶瓷的表面粗糙度（Ra）在0.5〜9.0埃的范围内。

公开(公告)号：US6066547A

公开(公告)日：2000-05-23

申请号：US879386

申请日：1997-06-20

申请人： Masashi Maekawa

发明人： Masashi Maekawa

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L29/45 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L21/2022 ,  H01L29/458 ,  H01L29/78675

摘要： A method for annealing amorphous silicon film to produce polycrystalline film suitable for thin-film transistors fabricated on glass substrates is provided. The method involves using nickel to help induce the crystallization. The method also uses a high temperature, for a short period of time, to anneal the amorphous silicon. A one-step annealing process implants nickel ions, having a dosage of approximately 1.times.10.sup.15 ions/cm.sup.2, into the silicon before annealing. A two-step annealing process is also provided in which a thin nickel film is put in close proximity to the amorphous silicon film. A first, low temperature, anneal converts a portion of the films to nickel silicide. A second, high temperature, anneal uses the silicide to induce the amorphous film to crystallize. A TFT polycrystalline film made by the above mentioned process of using nickel and, either a one, or two-step high temperature annealing to induce crystallization is also provided.

摘要翻译： 提供了一种使非晶硅膜退火以制造适用于在玻璃基板上制造的薄膜晶体管的多晶膜的方法。 该方法包括使用镍来帮助诱导结晶。 该方法还使用高温度短时间来退火非晶硅。 一步退火工艺在退火之前将大约1×10 15个离子/ cm 2剂量的镍离子注入到硅中。 还提供了两步退火工艺，其中薄镍膜被放置在非晶硅膜附近。 首先，低温退火将一部分薄膜转化为硅化镍。 第二个高温退火使用硅化物来诱导非晶膜结晶。 还提供了通过上述使用镍的方法制成的TFT多晶膜，并且还提供了一步或两步高温退火以诱导结晶。

公开(公告)号：US5005797A

公开(公告)日：1991-04-09

申请号：US330085

申请日：1989-03-15

申请人： Masashi Maekawa ,  Kunio Kotani ,  Ryoji Ukaji ,  Hiroshi Shimizu ,  Kenichi Sato

发明人： Masashi Maekawa ,  Kunio Kotani ,  Ryoji Ukaji ,  Hiroshi Shimizu ,  Kenichi Sato

IPC分类号： B60R1/076

CPC分类号： B60R1/076 ,  Y10S248/90

摘要： The door mirror according to the present invention is a so-called tiltable door mirror for vehicles. The bearing member to bear the shaft of the mirror base which is to be fixed to the vehicle door is formed integrally with the synthetic resin-made mirror housing. The bearing member is formed as a bearing cylinder inside the mirror housing. Being in contact with the bearing surface of the bearing cylinder, the shaft pivotably supports the mirror housing. There is provided between the inner wall of the bearing cylinder and the shaft a U-shaped leaf spring which is in contact at the one end thereof with the inner wall of the bearing cylinder and at the other end with the flat surface formed at a part of the shaft, whereby the friction generated under the action of the leaf spring helps to block the mirror housing from pivoting and thus the mirror housing can be held in the normal position. The shaft has disposed at the end thereof a stopper to prevent the mirror housing from moving axially of the shaft. When a big external force is applied to the mirror housing, the portion of contact between the leaf spring and the shaft moves from the flat surface to the circumferential surface against the force of the leaf spring, so that the mirror housing is pivoted slowly from the normal position to a front or rear position with respect to the normal position. The door mirror of the present invention consists of a reduced number of elements and has a simplified structure. Furthermore, since it can be installed very easily, the manufacturing costs can be reduced very much.

公开(公告)号：US4801351A

公开(公告)日：1989-01-31

申请号：US943428

申请日：1986-12-19

申请人： Katunobu Awane ,  Masayoshi Koba ,  Toshiaki Miyajima ,  Masashi Maekawa

发明人： Katunobu Awane ,  Masayoshi Koba ,  Toshiaki Miyajima ,  Masashi Maekawa

IPC分类号： C30B29/66 ,  H01L21/20 ,  C30B1/08

CPC分类号： H01L21/2026 ,  Y10S117/902 ,  Y10S117/904

摘要： Improvements in a method for performing a monocrystallizing operation through the application of energy beams upon a non-monocrystalline thin-film of non-crystalline or polycrystalline material formed on a non-crystalline insulating film. The resulting superior monocrystalline thin-film has a crystal direction coinciding with that of the monocrystalline silicon base-plate and is formed on the insulating film even if the insulating film is as thick as 4 .mu.m. The thin-film is sufficiently covered between the active layers of a three-dimensional circuit element on the monocrystalline silicon base plate. '

摘要翻译： 通过在非晶体绝缘膜上形成非晶或多晶材料的非单晶薄膜上施加能量束来进行单晶化操作的方法的改进。 所得到的优异的单晶薄膜的晶体方向与单晶硅基板的晶体方向一致，即使绝缘膜厚度达到4μm，也形成在绝缘膜上。 薄膜充分覆盖在单晶硅基板上的三维电路元件的有源层之间。

公开(公告)号：US07153359B2

公开(公告)日：2006-12-26

申请号：US10254013

申请日：2002-09-25

申请人： Masashi Maekawa ,  Keiichi Fukuyama ,  Michinori Iwai ,  Kohei Tanaka

发明人： Masashi Maekawa ,  Keiichi Fukuyama ,  Michinori Iwai ,  Kohei Tanaka

IPC分类号： C30B13/28

CPC分类号： H01L21/02691 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/66757 ,  Y10S117/904 ,  Y10S117/905

摘要： A crystalline semiconductor film, the crystalline semiconductor film being formed over an insulative substrate, and including semiconductor crystal grains laterally grown along a surface of the insulative substrate, wherein the laterally-grown semiconductor crystal grains are in contact with each other at grain boundaries, and a distance between adjacent grain boundaries is equal to or smaller than two times a lateral growth distance of the semiconductor crystal grains.