公开(公告)号：US07049183B2

公开(公告)日：2006-05-23

申请号：US10699460

申请日：2003-11-03

申请人： Naoki Makita ,  Michinori Iwai ,  Shinya Morino ,  Takayuki Tsutsumi

发明人： Naoki Makita ,  Michinori Iwai ,  Shinya Morino ,  Takayuki Tsutsumi

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L21/02672 ,  H01L21/02675 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of the present invention includes the steps of forming an amorphous semiconductor layer on an insulative surface, adding a catalyst element capable of promoting crystallization to the amorphous semiconductor layer and then performing a first heat treatment so as to crystallize the amorphous semiconductor layer, thereby obtaining a crystalline semiconductor layer, performing a first gettering process to remove the catalyst element from the semiconductor layer, and performing a second gettering process that is different from the first gettering process to remove the catalyst element from the semiconductor layer. The first gettering process includes removing at least large masses of a semiconductor compound of the catalyst element present in the crystalline semiconductor layer. The second gettering process includes moving at least a portion of the catalyst element remaining in the crystalline semiconductor layer so as to form a low-catalyst-concentration region in the crystalline semiconductor layer, the low-catalyst-concentration region having a lower catalyst element concentration than in other regions.

摘要翻译： 本发明的方法包括以下步骤：在绝缘表面上形成非晶半导体层，向非晶半导体层添加能够促进结晶的催化剂元件，然后进行第一热处理以使非晶半导体层结晶，由此 获得晶体半导体层，执行第一吸气工艺以从半导体层去除催化剂元件，以及执行与第一吸气过程不同的第二吸气过程以从半导体层去除催化剂元件。 第一吸气方法包括除去至少大质量的结晶半导体层中存在的催化剂元素的半导体化合物。 第二吸气过程包括将至少一部分留在结晶半导体层中的催化剂元素移动以在结晶半导体层中形成低催化剂浓度区域，低催化剂浓度区域具有较低的催化剂元素浓度 比其他地区。

公开(公告)号：US06673659B2

公开(公告)日：2004-01-06

申请号：US09771625

申请日：2001-01-30

申请人： Mitsunori Sakama ,  Noriko Ishimaru ,  Masahiko Miwa ,  Michinori Iwai

发明人： Mitsunori Sakama ,  Noriko Ishimaru ,  Masahiko Miwa ,  Michinori Iwai

IPC分类号： H01L2100

CPC分类号： H01L27/1218 ,  G02F1/13454 ,  H01L21/67236 ,  H01L27/1214 ,  H01L27/1262 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78636 ,  H01L2029/7863

摘要： A base film is formed for the TFTs in order to prevent diffusion of impurities from the glass substrate into the active layer, to maintain stability in the characteristics such as Vth and S-value of the TFTs and to maintain enhanced productivity. A film in which the composition ratios of N, O and H are continuously changed by changing the flow rates of H2 and N2O, is used as the base film to prevent a change in the TFT characteristics. The base film can be formed by varying the flow rates of H2 and N2O in the same film-forming chamber to enhance the productivity.

摘要翻译： 为了防止杂质从玻璃基板扩散到有源层中，为了保持诸如TFT的Vth和S值的特性的稳定性，为了保持提高的生产率，为TFT形成基膜。 使用通过改变H 2和N 2 O的流量来连续地改变N，O和H的组成比的膜作为基膜，以防止TFT特性的变化。 基膜可以通过改变相同成膜室中的H 2和N 2 O的流速来提高生产率而形成。

公开(公告)号：US07153359B2

公开(公告)日：2006-12-26

申请号：US10254013

申请日：2002-09-25

申请人： Masashi Maekawa ,  Keiichi Fukuyama ,  Michinori Iwai ,  Kohei Tanaka

发明人： Masashi Maekawa ,  Keiichi Fukuyama ,  Michinori Iwai ,  Kohei Tanaka

IPC分类号： C30B13/28

CPC分类号： H01L21/02691 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/66757 ,  Y10S117/904 ,  Y10S117/905

摘要： A crystalline semiconductor film, the crystalline semiconductor film being formed over an insulative substrate, and including semiconductor crystal grains laterally grown along a surface of the insulative substrate, wherein the laterally-grown semiconductor crystal grains are in contact with each other at grain boundaries, and a distance between adjacent grain boundaries is equal to or smaller than two times a lateral growth distance of the semiconductor crystal grains.