发明授权
- 专利标题: Process to improve programming of memory cells
- 专利标题(中): 改善存储单元编程的过程
-
申请号: US11044813申请日: 2005-01-26
-
公开(公告)号: US07153755B2公开(公告)日: 2006-12-26
- 发明人: Shih-Chang Liu , Wen-Ting Chu , Chien-Ming Ku , Chi-Hsin Lo , Chia-Shiung Tsai , Chia-Ta Hsieh
- 申请人: Shih-Chang Liu , Wen-Ting Chu , Chien-Ming Ku , Chi-Hsin Lo , Chia-Shiung Tsai , Chia-Ta Hsieh
- 申请人地址: TW
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW
- 代理机构: Duane Morris LLP
- 主分类号: H01L21/762
- IPC分类号: H01L21/762
摘要:
A method is provided for fabrication of a semiconductor substrate having regions isolated from each other by shallow trench isolation (STI) structures protruding above a surface of the substrate by a step height. The method includes the steps of forming a bottom antireflective coating (BARC) layer overlying the surface of a semiconductor substrate and the surface of STI structures; etching back a portion of the BARC layer overlying at least one of the STI structures, and partially etching back the at least one of the STI structures, to reduce the step height by which the STI structure protrudes above the surface of the substrate; and removing a remaining portion of the BARC layer between adjacent STI structures. The method may be used to fabricate semiconductor devices including memory cells that have improved reliability.
公开/授权文献
- US20060163686A1 Novel process to improve programming of memory cells 公开/授权日:2006-07-27