发明授权
US07153773B2 TiSiN film forming method, diffusion barrier TiSiN film, semiconductor device, method of fabricating the same and TiSiN film forming system
失效
TiSiN膜形成方法，扩散阻挡层TiSiN膜，半导体器件，其制造方法和TiSiN膜形成系统
- 专利标题： TiSiN film forming method, diffusion barrier TiSiN film, semiconductor device, method of fabricating the same and TiSiN film forming system
- 专利标题（中）： TiSiN膜形成方法，扩散阻挡层TiSiN膜，半导体器件，其制造方法和TiSiN膜形成系统
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申请号： US10868936申请日： 2004-06-17
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公开(公告)号： US07153773B2公开(公告)日： 2006-12-26
- 发明人: Hayashi Otsuki , Kunihiro Tada , Kimihiro Matsuse
- 申请人： Hayashi Otsuki , Kunihiro Tada , Kimihiro Matsuse
- 申请人地址： JP Tokyo-To
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo-To
- 代理机构： Smith, Gambrell & Russell, LLP
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/31
摘要：
A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl4 gas, a silicon hydride gas and NH3 gas are used as source gases for forming the TiSiN film by the thermal CVD process. TiCl4 gas, a silicon hydride gas, H2 gas and N2 gas are used as source gases for forming a TiSiN film by the plasma CVD process.