公开(公告)号：US06919273B1

公开(公告)日：2005-07-19

申请号：US10148952

申请日：1999-12-09

申请人： Hayashi Otsuki ,  Kunihiro Tada ,  Kimihiro Matsuse

发明人： Hayashi Otsuki ,  Kunihiro Tada ,  Kimihiro Matsuse

IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/485 ,  H01L27/108 ,  H01L29/49 ,  H01L21/44 ,  H01L21/4763

CPC分类号： C23C16/45514 ,  C23C16/34 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76871 ,  H01L23/485 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65 ,  H01L28/75 ,  H01L29/4966 ,  H01L29/513 ,  H01L2924/0002 ,  H01L2924/00

摘要： A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl4 gas, a silicon hydride gas and NH3 gas are used as source gases for forming the TiSiN film by the thermal CVD process. TiCl4 gas, a silicon hydride gas, H2 gas and N2 gas are used as source gases for forming a TiSiN film by the plasma CVD process.

摘要翻译： 使用TiSiN膜作为半导体器件的阻挡金属层，以防止Cu的扩散。 TiSiN膜通过等离子体CVD法或热CVD法形成。 使用TiCl 4气体，氢化硅气体和NH 3气体作为用于通过热CVD法形成TiSiN膜的源气体。 使用TiCl 4气体，氢化硅气体，H 2气体和N 2气体作为用于通过等离子体形成TiSiN膜的源气体 CVD工艺。

公开(公告)号：US07153773B2

公开(公告)日：2006-12-26

申请号：US10868936

申请日：2004-06-17

申请人： Hayashi Otsuki ,  Kunihiro Tada ,  Kimihiro Matsuse

发明人： Hayashi Otsuki ,  Kunihiro Tada ,  Kimihiro Matsuse

IPC分类号： H01L21/44 ,  H01L21/31

CPC分类号： C23C16/45514 ,  C23C16/34 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76871 ,  H01L23/485 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65 ,  H01L28/75 ,  H01L29/4966 ,  H01L29/513 ,  H01L2924/0002 ,  H01L2924/00

摘要： A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl4 gas, a silicon hydride gas and NH3 gas are used as source gases for forming the TiSiN film by the thermal CVD process. TiCl4 gas, a silicon hydride gas, H2 gas and N2 gas are used as source gases for forming a TiSiN film by the plasma CVD process.

摘要翻译： 使用TiSiN膜作为半导体器件的阻挡金属层，以防止Cu的扩散。 TiSiN膜通过等离子体CVD法或热CVD法形成。 使用TiCl 4气体，氢化硅气体和NH 3气体作为用于通过热CVD法形成TiSiN膜的源气体。 使用TiCl 4气体，氢化硅气体，H 2气体和N 2气体作为用于通过等离子体形成TiSiN膜的源气体 CVD工艺。

公开(公告)号：US07829144B2

公开(公告)日：2010-11-09

申请号：US11032060

申请日：2005-01-11

申请人： Kimihiro Matsuse ,  Hayashi Otsuki

发明人： Kimihiro Matsuse ,  Hayashi Otsuki

IPC分类号： C23C16/00

CPC分类号： H01L21/76843 ,  H01L21/28061 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76877 ,  H01L23/53238 ,  H01L29/4941 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a refractory metal film doped with III or V group elements. The first process gas is supplied from a first gas source through a first gas introducing member to and through a gas supply mechanism toward a substrate within a processing vessel. The second process gas is supplied from a second gas source through a second gas introducing member to and through the gas supply mechanism toward the substrate within the processing vessel. The processing vessel is purged by evacuating the processing vessel by an evacuating mechanism, while supplying the inert gas from a third source through a third gas introducing member to and through the gas supply mechanism into the processing vessel. The supplying the first process gas and the supplying the second process gas are repeated with the supplying the purging gas being carried out between supplying the first and second gases performed so that residual gas present in the processing vessel after performing the supplying of the first and second process gases is reduced to a level of 1 to 30% based on the entire capacity of the processing vessel.

摘要翻译： 形成掺杂有III族或V族元素的难熔金属膜的方法。 第一工艺气体从第一气体源通过第一气体引入构件供应到处理容器内并通过气体供给机构朝向衬底。 第二工艺气体从第二气体源通过第二气体引入构件经过气体供给机构向处理容器内的衬底提供。 通过抽空机构抽空处理容器，同时通过第三气体引入构件将惰性气体从第三源供给到气体供给机构并进入处理容器，从而对处理容器进行吹扫。 重复提供第一处理气体和供应第二处理气体，同时供应在供应第一和第二气体之间进行的净化气体，使得在执行第一和第二气体供应之后存在于处理容器中的残留气体 处理气体基于处理容器的整个容量降低至1至30％的水平。

公开(公告)号：US06861356B2

公开(公告)日：2005-03-01

申请号：US10225228

申请日：2002-08-22

申请人： Kimihiro Matsuse ,  Hayashi Otsuki

发明人： Kimihiro Matsuse ,  Hayashi Otsuki

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L29/49 ,  H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/28061 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76877 ,  H01L23/53238 ,  H01L29/4941 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a method of forming a barrier metal which is designed to be interposed between a metal layer and an insulating layer, both constituting a multi-layered structure of semiconductor device, the method comprising the steps of positioning a substrate having the insulating layer formed thereon at a predetermined position inside a processing vessel forming a processing space, and alternately introducing a gas containing a refractory metallic atom, a gas containing Si atom and a gas containing N atom into the processing vessel under a predetermined processing pressure, thereby allowing a refractory metal nitride or a refractory metal silicon nitride to be deposited on the insulating layer by way of atomic layer deposition.

摘要翻译： 提供一种形成阻挡金属的方法，该阻挡金属被设计成介于金属层和绝缘层之间，均构成半导体器件的多层结构，该方法包括以下步骤：定位具有形成绝缘层的基板 在形成处理空间的处理容器内的预定位置上，在预定的处理压力下，将含有难熔金属原子的气体，含有Si原子的气体和含有N原子的气体交替地引入处理容器中，由此允许耐火材料 金属氮化物或难熔金属氮化硅通过原子层沉积沉积在绝缘层上。

公开(公告)号：US20050191803A1

公开(公告)日：2005-09-01

申请号：US11032060

申请日：2005-01-11

申请人： Kimihiro Matsuse ,  Hayashi Otsuki

发明人： Kimihiro Matsuse ,  Hayashi Otsuki

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L29/49 ,  H01L21/8238

CPC分类号： H01L21/76843 ,  H01L21/28061 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76877 ,  H01L23/53238 ,  H01L29/4941 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a refractory metal film doped with III or V group elements. The first process gas is supplied from a first gas source through a first gas introducing member to and through a gas supply mechanism toward a substrate within a processing vessel. The second process gas is supplied from a second gas source through a second gas introducing member to and through the gas supply mechanism toward the substrate within the processing vessel. The processing vessel is purged by evacuating the processing vessel by an evacuating mechanism, while supplying the inert gas from a third source through a third gas introducing member to and through the gas supply mechanism into the processing vessel. The supplying the first process gas and the supplying the second process gas are repeated with the supplying the purging gas being carried out between supplying the first and second gases performed so that residual gas present in the processing vessel after performing the supplying of the first and second process gases is reduced to a level of 1 to 30% based on the entire capacity of the processing vessel.

摘要翻译： 形成掺杂有III族或V族元素的难熔金属膜的方法。 第一工艺气体从第一气体源通过第一气体引入构件供应到处理容器内并通过气体供给机构朝向衬底。 第二工艺气体从第二气体源通过第二气体引入构件经过气体供给机构向处理容器内的衬底提供。 通过抽空机构抽空处理容器，同时通过第三气体引入构件将惰性气体从第三源供给到气体供给机构并进入处理容器，从而对处理容器进行吹扫。 重复提供第一处理气体和供应第二处理气体，同时供应在供应第一和第二气体之间进行的净化气体，使得在执行第一和第二气体供应之后存在于处理容器中的残留气体 处理气体基于处理容器的整个容量降低至1至30％的水平。

公开(公告)号：US06838376B2

公开(公告)日：2005-01-04

申请号：US09530588

申请日：1998-11-05

申请人： Kimihiro Matsuse ,  Hayashi Otsuki

发明人： Kimihiro Matsuse ,  Hayashi Otsuki

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L29/49 ,  H01L29/78 ,  H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/28061 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76856 ,  H01L21/76877 ,  H01L23/53228 ,  H01L23/53238 ,  H01L29/4941 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a barrier metal film formed of a nitride film including tungsten by thermal CVD. The method includes positioning a substrate in a processing vessel and forming a WSi film on one side of the substrate by supplying a process gas including WF6 gas and at least one of SiR4 gas, SiH2Cl2 gas and Si2H6 gas into the processing vessel while a processing pressure in the processing vessel is maintained. The method also includes shutting off the supplying of the process gas into the processing vessel and completely removing the process gas from the processing vessel by supplying a purging gas into the processing vessel after the shutting off the supplying. The WSi film is nitrided by supplying NH3 gas or MMH gas into the processing vessel from which the process gas has been removed, to form a WSixNy film.

摘要翻译： 通过热CVD形成由包含钨的氮化物膜形成的阻挡金属膜的方法。 该方法包括将基底定位在处理容器中，并通过向处理容器提供包括WF 6气体和SiR 4气体，SiH 2 Cl 2气体和Si 2 H 6气体中的至少一种的工艺气体，同时处理压力 在加工容器中维护。 该方法还包括通过在关闭供应之后向处理容器中提供净化气体来关闭将处理气体供应到处理容器中并从处理容器中完全除去工艺气体。 通过向已经除去工艺气体的处理容器中提供NH 3气体或MMH气体来形成WSixNy膜来渗透WSi膜。

公开(公告)号：US07484513B2

公开(公告)日：2009-02-03

申请号：US11028736

申请日：2005-01-05

申请人： Kunihiro Tada ,  Hayashi Otsuki

发明人： Kunihiro Tada ,  Hayashi Otsuki

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C16/045 ,  C23C16/08 ,  H01L21/76855

摘要： A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

摘要翻译： 通过CVD法形成的Si膜上形成的绝缘膜上形成的Ti膜或通过本发明的方法形成在Si衬底上的Si膜上形成Ti膜。 该方法包括将Si衬底加载到成膜室中的步骤; 在预定的真空下抽空腔室; 将TiCl 4气体，H 2气体，Ar气体和SiH 4气体供给到成膜室中; 并在成膜室中产生等离子体，以在形成在绝缘膜中的孔中沉积Ti膜。 Si衬底在沉积T​​i膜期间在500℃或更低温度下被加热。 SiH 4气体的流量为TiCl 4气体流量的30-70％。 该方法能够在绝缘层的空穴位置的Si基上形成Ti膜，Si基和Ti膜之间的界面的形貌良好，具有良好的阶梯覆盖。

公开(公告)号：US06841203B2

公开(公告)日：2005-01-11

申请号：US10216398

申请日：2002-08-12

申请人： Kunihiro Tada ,  Hayashi Otsuki

发明人： Kunihiro Tada ,  Hayashi Otsuki

IPC分类号： C23C16/04 ,  C23C16/08 ,  H01L21/768 ,  H05H1/24

CPC分类号： H01L21/76843 ,  C23C16/045 ,  C23C16/08 ,  H01L21/76855

摘要： A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

摘要翻译： 通过CVD法形成的Si膜上形成的绝缘膜上形成的Ti膜或通过本发明的方法形成在Si衬底上的Si膜上形成Ti膜。 该方法包括以下步骤：将Si衬底加载到成膜室中; 在预定的真空下抽空腔室; 将TiCl 4气体，H 2气体，Ar气体和SiH 4气体供给到成膜室中; 并在成膜室中产生等离子体，以在形成在绝缘膜中的孔中沉积Ti膜。 Si衬底在沉积T​​i膜期间在500℃或更低温度下被加热。 SiH 4气体的流量为TiCl 4气体流量的30-70％。 该方法能够在绝缘层的空穴位置的Si基上形成Ti膜，Si基和Ti膜之间的界面的形貌良好，具有良好的阶梯覆盖。

公开(公告)号：US06451388B1

公开(公告)日：2002-09-17

申请号：US09713008

申请日：2000-11-16

申请人： Kunihiro Tada ,  Hayashi Otsuki

发明人： Kunihiro Tada ,  Hayashi Otsuki

IPC分类号： H05H124

CPC分类号： H01L21/76855 ,  C23C16/045 ,  C23C16/08 ,  H01L21/76843

摘要： A Ti film is formed by chemical vapor deposition in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method comprising the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at a temperature of from 550 to 700° C. during the deposition of the Ti film, and the flow rates of the processing gases are regulated so that Si-to-insulator selectivity is not less than one. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

摘要翻译： 通过在Si衬底上形成的绝缘膜中形成的孔中或在Si衬底上形成的Si膜上的化学气相沉积形成Ti膜，该方法包括以下步骤：将Si衬底装载到成膜室中; 在预定的真空下抽空腔室; 将TiCl 4气体，H 2气体，Ar气体和SiH 4气体供给到成膜室中; 并在成膜室中产生等离子体，以在形成在绝缘膜中的孔中沉积Ti膜。 在沉积Ti膜期间，Si衬底在550-700℃的温度下被加热，并调节处理气体的流速，使得Si至绝缘体的选择性不小于1。 该方法能够在绝缘层的空穴位置的Si基上形成Ti膜，Si基和Ti膜之间的界面的形貌良好，具有良好的阶梯覆盖。

公开(公告)号：US06177149B1

公开(公告)日：2001-01-23

申请号：US09216938

申请日：1998-12-21

申请人： Kunihiro Tada ,  Hayashi Otsuki

发明人： Kunihiro Tada ,  Hayashi Otsuki

IPC分类号： H05H124

CPC分类号： H01L21/76843 ,  C23C16/045 ,  C23C16/08

摘要： A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method comprising the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 550° C. or above during the deposition of the Ti film, and the flow rates of the processing gases are regulated so that Si-to-insulator selectivity is not less than one. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

摘要翻译： 通过在Si衬底上形成的绝缘膜上形成的孔中或通过Si衬底上形成的Si膜上形成的Ti形成Ti膜，该方法包括以下步骤：将Si衬底装载到成膜室中; 在预定的真空下抽空腔室; 将TiCl 4气体，H 2气体，Ar气体和SiH 4气体供给到成膜室中; 并在成膜室中产生等离子体，以在形成在绝缘膜中的孔中沉积Ti膜。 Si衬底在沉积T​​i膜期间在550℃或更高温度下被加热，并且调节处理气体的流速，使得Si至绝缘体的选择性不小于1。 该方法能够在绝缘层的空穴位置的Si基上形成Ti膜，Si基和Ti膜之间的界面的形貌良好，具有良好的阶梯覆盖。