Invention Grant
US07157191B2 Single trench repair method with etched quartz for attenuated phase shifting mask
有权
用于衰减相移掩模的具有蚀刻石英的单沟槽修复方法
- Patent Title: Single trench repair method with etched quartz for attenuated phase shifting mask
- Patent Title (中): 用于衰减相移掩模的具有蚀刻石英的单沟槽修复方法
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Application No.: US10755500Application Date: 2004-01-12
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Publication No.: US07157191B2Publication Date: 2007-01-02
- Inventor: Cheng-Ming Lin
- Applicant: Cheng-Ming Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Thomas, Kayden, Horstemeyer & Risley
- Main IPC: G01F9/00
- IPC: G01F9/00

Abstract:
In accordance with the objectives of the invention a new method is provided for the repair of an attenuated phase shifting mask having a contact pattern. The invention etches a single trench in the quartz substrate of the phase shifter mask and removes the impact of a void in the phase shifter material. Alternatively, the invention provides for first conventionally restoring the original dimensions of a contact hole in which a pinhole is present and then etching a single or a double trench in the exposed substrate of the restored contact opening.
Public/Granted literature
- US20050153214A1 Single trench repair method with etched quartz for attenuated phase shifting mask Public/Granted day:2005-07-14
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