Invention Grant
- Patent Title: Low polarization gain dependent semiconductor optical amplifier with variable residual cladding layer thickness
- Patent Title (中): 具有可变残余包层厚度的低偏振增益相关半导体光放大器
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Application No.: US10767651Application Date: 2004-01-29
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Publication No.: US07158291B2Publication Date: 2007-01-02
- Inventor: Simarjeet S. Saini , Peter J. S. Heim , Scott A. Merritt , Mario Dagenais
- Applicant: Simarjeet S. Saini , Peter J. S. Heim , Scott A. Merritt , Mario Dagenais
- Applicant Address: US MD Jessup
- Assignee: Quantum Photonics, Inc.
- Current Assignee: Quantum Photonics, Inc.
- Current Assignee Address: US MD Jessup
- Agency: Potomac Patent Group PLLC
- Main IPC: H01S4/00
- IPC: H01S4/00 ; H04B10/12

Abstract:
A semiconductor optical amplifier (SOA) has an overall gain that is substantially polarization independent, i.e., less than 1 dB difference between transverse electric (TE) and transverse magnetic (TM) gain. The SOA includes a residual cladding layer having different thicknesses over different portions of the gain section. Over a first portion of the gain section, the residual cladding layer is thinner than over a second portion of the gain section. This results in the first portion providing more gain to optical energy having a TE polarization state than optical energy having a TM polarization state. In the second portion of the gain section, however, more gain is provided to optical energy having a TM polarization state than energy having a TE polarization state. The resulting gain differences can be designed to offset one another so that the output has a gain that is substantially polarization independent.
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