Invention Grant
US07158291B2 Low polarization gain dependent semiconductor optical amplifier with variable residual cladding layer thickness 有权
具有可变残余包层厚度的低偏振增益相关半导体光放大器

Low polarization gain dependent semiconductor optical amplifier with variable residual cladding layer thickness
Abstract:
A semiconductor optical amplifier (SOA) has an overall gain that is substantially polarization independent, i.e., less than 1 dB difference between transverse electric (TE) and transverse magnetic (TM) gain. The SOA includes a residual cladding layer having different thicknesses over different portions of the gain section. Over a first portion of the gain section, the residual cladding layer is thinner than over a second portion of the gain section. This results in the first portion providing more gain to optical energy having a TE polarization state than optical energy having a TM polarization state. In the second portion of the gain section, however, more gain is provided to optical energy having a TM polarization state than energy having a TE polarization state. The resulting gain differences can be designed to offset one another so that the output has a gain that is substantially polarization independent.
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