公开(公告)号：US20050030614A1

公开(公告)日：2005-02-10

申请号：US10767651

申请日：2004-01-29

申请人： Simarjeet Saini ,  Peter Heim ,  Scott Merritt ,  Mario Dagenais

发明人： Simarjeet Saini ,  Peter Heim ,  Scott Merritt ,  Mario Dagenais

IPC分类号： H01S3/00 ,  H01S5/223 ,  H01S5/32 ,  H01S5/50

CPC分类号： H01S5/5009 ,  H01S5/2231 ,  H01S5/3211

摘要： A semiconductor optical amplifier (SOA) has an overall gain that is substantially polarization independent, i.e., less than 1 dB difference between transverse electric (TE) and transverse magnetic (TM) gain. The SOA includes a residual cladding layer having different thicknesses over different portions of the gain section. Over a first portion of the gain section, the residual cladding layer is thinner than over a second portion of the gain section. This results in the first portion providing more gain to optical energy having a TE polarization state than optical energy having a TM polarization state. In the second portion of the gain section, however, more gain is provided to optical energy having a TM polarization state than energy having a TE polarization state. The resulting gain differences can be designed to offset one another so that the output has a gain that is substantially polarization independent.

摘要翻译： 半导体光放大器（SOA）具有基本上偏振无关的总体增益，即横向电（TE）和横向磁（TM）增益之间的差小于1dB。 SOA包括在增益部分的不同部分上具有不同厚度的残余覆层。 在增益部分的第一部分上，残余包层比增益部分的第二部分薄。 这导致第一部分比具有TM偏振状态的光能提供具有TE极化状态的光能的更多增益。 然而，在增益部分的第二部分中，对具有TM极化状态的光能比具有TE极化状态的能量提供更多的增益。 所产生的增益差异可被设计为彼此偏移，使得输出具有基本上与偏振无关的增益。

公开(公告)号：US06610612B2

公开(公告)日：2003-08-26

申请号：US10012352

申请日：2001-12-12

申请人： Mario Dagenais ,  Bikash Koley ,  Frederick G. Johnson

发明人： Mario Dagenais ,  Bikash Koley ,  Frederick G. Johnson

IPC分类号： H01L2100

CPC分类号： B82Y20/00 ,  H01S5/18311 ,  H01S5/18333 ,  H01S5/2215 ,  H01S5/34306 ,  H01S5/3434

摘要： A method of selectively oxidizing III-V semiconductor material is provided. There is provided a III-V semiconductor system comprising a short-period super lattice (SSL) of N periods of alternating layers of an aluminum-bearing III-V compound semiconductor material and a second III-V semiconductor material where N≧2, at least one phosphorous-rich III-V semiconductor layer, and at least one substantially phosphorous-free III-V semiconductor layer between each of the at least one phosphorous-rich layers and the SSL. The III-V semiconductor system is exposed to oxidizing atmosphere to selectively oxidize at least a portion of the SSL.

公开(公告)号：US5354575A

公开(公告)日：1994-10-11

申请号：US47840

申请日：1993-04-16

申请人： Mario Dagenais ,  I-Fan Wu

发明人： Mario Dagenais ,  I-Fan Wu

IPC分类号： C23C14/54 ,  C23C16/52 ,  G01N21/21 ,  H01L33/44 ,  B05D3/06 ,  B05D5/06 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01L33/44 ,  C23C14/547 ,  C23C16/52 ,  G01N21/211

摘要： The invention describes a real-time in situ ellipsometric monitoring and control system using an ellipsometer to control the averaged refractive index of the deposited film during the AR coating of semiconductor laser diode facets for laser amplifiers and superluminescent LED. The input and output window birefringences are taken into account and calibrated the windows mounted on the vacuum chamber to include the effects of the pressure and mounting stress. In addition to the conventional four-medium model which gives an averaged refractive index, an adaptive multilayer model which takes into account an increasing number of layers as the evaporation proceeded is developed to monitor the instantaneous changes of the refractive index. Each ellipsometric measurement lasts only 0.5s and provides two sets of refractive index and thickness data as derived by the two multilayer models. Both measured data are used for the refractive index control to achieve a good feedback response. This fast and sensitive measurement technique makes possible the feedback control of the refractive index in real time which in turn allows for better control of the deposition condition and also improves the reproducibility of the AR coating process. By combining the two measured refractive indices and using the weighted average as the control factor, precise control of the average refractive index within .+-.0.01 can be achieved and traveling-wave semiconductor laser amplifiers and superluminescent LEDs with facet reflectivities of order 10.sup.--5 or less are obtained reproducibly for a single layer coating. Multilayer AR coatings can also be fabricated by using the invention technique with different combination of materials. The coatings can further be fine tuned by using wet etching or an ion gun mounted in the same deposition chamber for film thinning.

摘要翻译： 本发明描述了一种使用椭圆偏振仪的实时原位椭偏监测和控制系统，用于在激光放大器和超发光LED的半导体激光二极管面的AR涂层期间控制沉积膜的平均折射率。 考虑输入和输出窗口双折射，并校准安装在真空室上的窗口，以包括压力和安装应力的影响。 除了提供平均折射率的常规四介质模型之外，开发了考虑随着蒸发进行而增加层数的自适应多层模型以监测折射率的瞬时变化。 每个椭偏测量仅持续0.5秒，并提供由两个多层模型导出的两组折射率和厚度数据。 两个测量数据都用于折射率控制以实现良好的反馈响应。 这种快速和灵敏的测量技术使得可以实时地反馈控制折射率，这又允许更好地控制沉积条件，并且还提高了AR涂覆过程的再现性。 通过组合两个测量的折射率并使用加权平均值作为控制因子，可以实现+/- 0.01内平均折射率的精确控制，并且行波半导体激光放大器和超发光LED的面反射率为10-5 或更低的重复获得单层涂层。 也可以通过使用不同材料组合的本发明技术来制造多层AR涂层。 通过使用湿式蚀刻或安装在相同沉积室中的离子枪进行膜薄化，可以进一步微调涂层。

公开(公告)号：US08052908B2

公开(公告)日：2011-11-08

申请号：US12114373

申请日：2008-05-02

申请人： Martin C. Peckerar ,  Mario Dagenais ,  Birendra Dutt ,  John D. Barry ,  Michael D. Messina, Jr. ,  Yves Ngu

发明人： Martin C. Peckerar ,  Mario Dagenais ,  Birendra Dutt ,  John D. Barry ,  Michael D. Messina, Jr. ,  Yves Ngu

IPC分类号： B29C33/40

CPC分类号： G03F7/70433 ,  G03F1/50 ,  G03F1/54

摘要： A nanophotolithography mask includes a layer of an electrically conductive optically opaque material deposited on a mask substrate in which regular arrays of sub-wavelength apertures are formed. The plasmonic excitation in the layer perforated with the sub-wavelength apertures arrays under the light incident on the mask produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer when propagated to the same. The fill-factor of the mask, i.e., the ratio of the total apertures area to the total mask area, may lead to a significant increase in mask manufacturing throughput by FIB or electron beam “writing”. The mask demonstrates the defect resiliency and ability to imprint coherent clear features of nano dimensions and shapes on the wafers for integrated circuits design.

摘要翻译： 纳米光刻掩模包括沉积在其上形成有规则的亚波长孔径阵列的掩模基板上的导电光学不透明材料层。 在入射到掩模上的光下，在亚波长孔径阵列穿孔的层中的等离子体激发产生足够强度的高分辨率远场辐射图，以在传播到晶片上时暴露光致抗蚀剂。 掩模的填充因子，即总孔面积与总掩模面积的比率可能导致通过FIB或电子束“写入”的掩模制造通过量的显着增加。 该面具证明了在集成电路设计的晶圆上印刷纳米尺寸和形状的相干清晰特征的缺陷弹性和能力。

公开(公告)号：US06314117B1

公开(公告)日：2001-11-06

申请号：US09461183

申请日：1999-12-14

申请人： Peter John Schultz Heim ,  Gregg Switzer ,  Mario Dagenais

发明人： Peter John Schultz Heim ,  Gregg Switzer ,  Mario Dagenais

IPC分类号： H01S500

CPC分类号： H01S5/02296 ,  H01L2224/48091 ,  H01S5/02212 ,  H01S5/02252 ,  H01S5/101 ,  H01S5/1085 ,  H01S5/141 ,  H01L2924/00014

摘要： The output optical beam from an angled-facet semiconductor laser diode is made to propagate parallel to the optical axis of the laser package with low optical back-reflection. In this way, the angled-facet devices are made compatible with conventional semiconductor laser packages enabling them to be economically incorporated in a wide-range of external semiconductor lasers and amplified spontaneous emission sources. The parallel beam is achieved by tilting the laser diode with respect to the front and back surfaces of the package.

摘要翻译： 来自角度小平面半导体激光二极管的输出光束被制成平行于具有低光学背反射的激光器封装的光轴传播。 以这种方式，角度小平面装置与传统的半导体激光器封装兼容，使得它们能够经济地并入宽范围的外部半导体激光器和放大的自发发射源。 通过使激光二极管相对于封装的前表面和后表面倾斜来实现平行光束。

公开(公告)号：US6027957A

公开(公告)日：2000-02-22

申请号：US673222

申请日：1996-06-27

申请人： Scott Andrew Merritt ,  Peter John Schultz Heim ,  Mario Dagenais

发明人： Scott Andrew Merritt ,  Peter John Schultz Heim ,  Mario Dagenais

IPC分类号： H01L23/482 ,  H01L23/488

CPC分类号： H01L23/4827 ,  H01L2924/0002 ,  H01L2924/3011

摘要： A method and a resulting device for mounting a semiconductor to a submount by depositing a first layer of a first metal solder having a selected first melting point and corresponding thickness onto a surface of the semiconductor. Depositing a second layer of a second metal solder having a selected second melting point higher than the first melting point and a corresponding selected thickness onto a surface of the submount. Disposing the semiconductor surface and submount surface in confronting intimate contact and heating the submount and semiconductor to a temperature greater than the first temperature and lower that the second temperature for initiating and promoting liquid interdiffusion between the first and second solders.

摘要翻译： 一种用于通过将具有选定的第一熔点和相应厚度的第一金属焊料的第一层沉积到半导体的表面上而将半导体安装到基座的方法和所得到的装置。 将具有高于第一熔点的选定的第二熔点和相应的所选厚度的第二金属焊料的第二层沉积到所述基座的表面上。 将半导体表面和底座表面布置成面对紧密接触并将基座和半导体加热到大于第一温度的温度，并降低第二温度以引发和促进第一和第二焊料之间的液体相互扩散。

公开(公告)号：US5022741A

公开(公告)日：1991-06-11

申请号：US796834

申请日：1985-11-12

申请人： Mario Dagenais ,  Wayne F. Sharfin

发明人： Mario Dagenais ,  Wayne F. Sharfin

IPC分类号： G02F3/02

CPC分类号： G02F3/024

摘要： The I.sub.2 bound exciton in cadmium sulfide (bound to a neutral donor) is a very efficient radiator, providing low switching energy and fast switching times for an ON and OFF optical bistable device, desirable for all-optical signal processing applications. The optical bistable device for light at a given wavelength includes a Fabry-Perot cavity having a pair of opposed mirrored surfaces. A direct bandgap semiconductor, such as CuCl, CdSe, CdS, and GaAs having a bound exciton, is located within the cavity. The cavity is tuned near resonance of the light. The bound exciton has a coefficient of absorption tuned near resonance. A light beam of varying intensity is applied from without the cavity to one of the surfaces. The semiconductor has both an index of refraction and a coefficient of absorption that vary with the magnitude of applied light. Thus, light applied thereto passes through the device either substantially unimpeded or impeded, dependent upon its magnitude.

摘要翻译： 硫化镉中的I2键合激子（与中性供体结合）是非常有效的辐射器，为ON和OFF光学双稳态器件提供低开关能量和快速切换时间，对于全光信号处理应用是理想的。 用于在给定波长的光的光学双稳态器件包括具有一对相对的镜像表面的法布里 - 珀罗腔。 具有结合的激子的直接带隙半导体，例如CuCl，CdSe，CdS和GaAs位于腔内。 空腔被调谐在光的共振附近。 结合的激子具有在谐振附近调谐的吸收系数。 从没有空腔的一个表面施加不同强度的光束。 半导体具有随施加的光的大小而变化的折射率和吸收系数。 因此，根据其大小，施加到其上的光基本上不受阻碍或阻碍地穿过该装置。

公开(公告)号：US08655565B2

公开(公告)日：2014-02-18

申请号：US13295254

申请日：2011-11-14

申请人： Mario Dagenais ,  Daniel Mercier

发明人： Mario Dagenais ,  Daniel Mercier

IPC分类号： G06F19/00 ,  B60T7/12 ,  B60K28/16

CPC分类号： B60G17/0157 ,  B60G2400/1042 ,  B60G2800/94 ,  B60T8/1706 ,  B60T8/1755 ,  B60T2240/06 ,  B62K5/027 ,  B62K5/05 ,  B62K5/08

摘要： A method for enhancing stability of a three wheel vehicle having a pair of front wheels and a single rear wheel, each of the wheels having a tire with a tire grip threshold. The method including deploying an electronic stability system (ESS) on the vehicle, providing the ESS with input from various vehicle sensors related to the longitudinal and lateral acceleration of the vehicle, causing the ESS to determine whether (i) a precursory condition indicative of a wheel lift exists and (ii) the tire grip threshold of any of the tires has been exceeded; and when a precursory condition indicative of a wheel lift exists and the tire grip threshold of none of the tires has been exceeded, causing the ESS to reduce the longitudinal acceleration of the vehicle by a first amount less than that which would cause the tire grip threshold of any of the tires to be exceeded.

摘要翻译： 一种用于增强具有一对前轮和单个后轮的三轮车的稳定性的方法，每个车轮具有轮胎夹紧阈值的轮胎。 该方法包括在车辆上部署电子稳定系统（ESS），为ESS提供与车辆的纵向和横向加速度相关的各种车辆传感器的输入，使ESS确定（i）是否指示 存在轮升降机，并且（ii）已经超过了任何一个轮胎的轮胎夹紧阈值; 并且当存在指示车轮升降的前兆条件并且没有超过轮胎的轮胎夹紧阈值时，使得ESS将车辆的纵向加速度减小到小于将导致轮胎抓地力阈值的第一量 超过任何一个轮胎。

公开(公告)号：US20120283918A1

公开(公告)日：2012-11-08

申请号：US13553153

申请日：2012-07-19

申请人： Mario DAGENAIS

发明人： Mario DAGENAIS

IPC分类号： B60W10/06 ,  B60W10/22 ,  B60W10/18

CPC分类号： B60W30/02 ,  B60T8/1706 ,  B60T8/1755 ,  B60T8/18 ,  B60T8/24 ,  B60T8/246 ,  B60T2230/03 ,  B60T2240/06 ,  B60T2250/02 ,  B62K5/027 ,  B62K5/05

摘要： A vehicle comprising a seat defining a driver seat portion and a passenger seat portion, an electronic stability system, adapted to receive inputs from a load sensor, a wheel rotation sensor and a lateral acceleration sensor, the electronic stability system adapted to provide outputs to at least one of the brake system for braking the vehicle, and the engine control unit to change the power output transmitted to the wheels by the engine, the electronic stability system using a first calibration to determine the outputs when the load sensor is in a non-loaded state and a second calibration to determine the outputs when the load sensor is in a loaded state.

摘要翻译： 一种包括限定驾驶员座椅部分和乘客座椅部分的座椅的车辆，适用于接收来自负载传感器，车轮旋转传感器和横向加速度传感器的输入的电子稳定系统，所述电子稳定系统适于将输出提供给 用于制动车辆的制动系统中的至少一个，以及发动机控制单元，用于改变由发动机传递到车轮的动力输出，电子稳定系统使用第一校准来确定当负载传感器处于非车辆状态时的输出， 负载状态和第二校准以在负载传感器处于负载状态时确定输出。

公开(公告)号：US20120061160A1

公开(公告)日：2012-03-15

申请号：US13295254

申请日：2011-11-14

申请人： Mario DAGENAIS ,  Daniel MERCIER

发明人： Mario DAGENAIS ,  Daniel MERCIER

IPC分类号： B60W30/04 ,  B60W10/04 ,  B60W10/18 ,  G06F19/00

CPC分类号： B60G17/0157 ,  B60G2400/1042 ,  B60G2800/94 ,  B60T8/1706 ,  B60T8/1755 ,  B60T2240/06 ,  B62K5/027 ,  B62K5/05 ,  B62K5/08

摘要： A method for enhancing stability of a three wheel vehicle having a pair of front wheels and a single rear wheel, each of the wheels having a tire with a tire grip threshold. The method including deploying an electronic stability system (ESS) on the vehicle, providing the ESS with input from various vehicle sensors related to the longitudinal and lateral acceleration of the vehicle, causing the ESS to determine whether (i) a precursory condition indicative of a wheel lift exists and (ii) the tire grip threshold of any of the tires has been exceeded; and when a precursory condition indicative of a wheel lift exists and the tire grip threshold of none of the tires has been exceeded, causing the ESS to reduce the longitudinal acceleration of the vehicle by a first amount less than that which would cause the tire grip threshold of any of the tires to be exceeded.

摘要翻译： 一种用于增强具有一对前轮和单个后轮的三轮车的稳定性的方法，每个车轮具有轮胎夹紧阈值的轮胎。 该方法包括在车辆上部署电子稳定系统（ESS），为ESS提供与车辆的纵向和横向加速度相关的各种车辆传感器的输入，使ESS确定（i）是否指示 存在轮升降机，并且（ii）已经超过了任何一个轮胎的轮胎夹紧阈值; 并且当存在指示车轮升降的前兆条件并且没有超过轮胎的轮胎夹紧阈值时，使得ESS将车辆的纵向加速度减小到小于将导致轮胎抓地力阈值的第一量 超过任何一个轮胎。