利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

10 条记录 (耗时 0.017 秒)

    Superluminescent diodes having high output power and reduced internal reflections
    2.
    发明授权
    Superluminescent diodes having high output power and reduced internal reflections 有权
    具有高输出功率和减少的内部反射的超发光二极管

    公开(公告)号：US07203409B2

    公开(公告)日：2007-04-10

    申请号：US10919112

    申请日：2004-08-16

    申请人： Scott A. Merritt ,  Peter J. S. Heim

    发明人： Scott A. Merritt ,  Peter J. S. Heim

    IPC分类号： G02B6/10 ,  H01S5/00

    CPC分类号： G02B6/125 ,  G02B6/12004 ,  G02B2006/12119 ,  H01L33/0045

    摘要： Systems and methods according to the present invention address this need and others by providing SLD devices and methods for generating optical energy that reduce internal reflections without the use of an absorber region. This can be accomplished by, among other things, adapting the waveguide geometry to dump reflections from the front facet out through the back facet of the device.

    摘要翻译： 根据本发明的系统和方法通过提供SLD装置和用于产生减少内部反射而不使用吸收体区域的光能的方法来满足这种需要。 这可以通过以下方式来实现：使波导几何形状能够将来自前端面的反射从设备的后面传送出去。

    Low polarization gain dependent semiconductor optical amplifier with variable residual cladding layer thickness
    3.
    发明授权
    Low polarization gain dependent semiconductor optical amplifier with variable residual cladding layer thickness 有权
    具有可变残余包层厚度的低偏振增益相关半导体光放大器

    公开(公告)号：US07158291B2

    公开(公告)日：2007-01-02

    申请号：US10767651

    申请日：2004-01-29

    申请人： Simarjeet S. Saini ,  Peter J. S. Heim ,  Scott A. Merritt ,  Mario Dagenais

    发明人： Simarjeet S. Saini ,  Peter J. S. Heim ,  Scott A. Merritt ,  Mario Dagenais

    IPC分类号： H01S4/00 ,  H04B10/12

    CPC分类号： H01S5/5009 ,  H01S5/2231 ,  H01S5/3211

    摘要： A semiconductor optical amplifier (SOA) has an overall gain that is substantially polarization independent, i.e., less than 1 dB difference between transverse electric (TE) and transverse magnetic (TM) gain. The SOA includes a residual cladding layer having different thicknesses over different portions of the gain section. Over a first portion of the gain section, the residual cladding layer is thinner than over a second portion of the gain section. This results in the first portion providing more gain to optical energy having a TE polarization state than optical energy having a TM polarization state. In the second portion of the gain section, however, more gain is provided to optical energy having a TM polarization state than energy having a TE polarization state. The resulting gain differences can be designed to offset one another so that the output has a gain that is substantially polarization independent.

    摘要翻译： 半导体光放大器（SOA）具有基本上偏振无关的总体增益，即横向电（TE）和横向磁（TM）增益之间的差小于1dB。 SOA包括在增益部分的不同部分上具有不同厚度的残余覆层。 在增益部分的第一部分上，残余覆层比增益部分的第二部分薄。 这导致第一部分比具有TM偏振状态的光能提供具有TE极化状态的光能的更多增益。 然而，在增益部分的第二部分中，对具有TM极化状态的光能比具有TE极化状态的能量提供更多的增益。 所产生的增益差异可被设计为彼此偏移，使得输出具有基本上与偏振无关的增益。

    Semiconductor optical amplifier with low polarization gain dependency
    4.
    发明授权
    Semiconductor optical amplifier with low polarization gain dependency 有权
    具有低偏振增益依赖性的半导体光放大器

    公开(公告)号：US07126749B2

    公开(公告)日：2006-10-24

    申请号：US10323630

    申请日：2002-12-20

    申请人： Peter J. S. Heim ,  Mario Dagenais ,  Simarjeet Saini ,  Xun Li

    发明人： Peter J. S. Heim ,  Mario Dagenais ,  Simarjeet Saini ,  Xun Li

    IPC分类号： H01S3/00

    CPC分类号： H01S5/5018 ,  H01S5/1014 ,  H01S5/125

    摘要： A semiconductor optical amplifier (SOA) has an overall gain that is substantially polarization independent, i.e., less than 1 dB difference between transverse electric (TE) and transverse magnetic (TM) gain. The SOA includes gain and polarization rotation functions integrated onto a single substrate. According to one exemplary embodiment, a passive polarization rotation section is disposed between two active gain sections.

    摘要翻译： 半导体光放大器（SOA）具有基本上偏振无关的总体增益，即横向电（TE）与横向磁（TM）增益之间的差小于1dB。 SOA包括集成到单个基板上的增益和偏振旋转函数。 根据一个示例性实施例，无源偏振旋转部分设置在两个主动增益部分之间。

    Semiconductor optical amplifier having a non-uniform injection current density
    6.
    发明授权
    Semiconductor optical amplifier having a non-uniform injection current density 有权
    半导体光放大器具有不均匀的注入电流密度

    公开(公告)号：US07359113B2

    公开(公告)日：2008-04-15

    申请号：US11346526

    申请日：2006-02-02

    申请人： Simarjeet S. Saini ,  Jerry L. Bowser ,  Vincent K. Luciani ,  Peter J. S. Heim ,  Mario Dagenais

    发明人： Simarjeet S. Saini ,  Jerry L. Bowser ,  Vincent K. Luciani ,  Peter J. S. Heim ,  Mario Dagenais

    IPC分类号： H01S3/00

    CPC分类号： H01S5/0425 ,  H01S5/22 ,  H01S5/50 ,  H01S2301/04

    摘要： A semiconductor optical amplifier (SOA) with efficient current injection is described. Injection current density is controlled to be higher in some areas and lower in others to provide, e.g., improved saturation power and/or noise figure. Controlled injection current can be accomplished by varying the resistivity of the current injection electrode. This, in turn, can be accomplished by patterning openings in the dielectric layer above the current injection metallization in a manner which varies the series resistance along the length of the device.

    摘要翻译： 描述了一种具有高效电流注入的半导体光放大器（SOA）。 注入电流密度在一些区域被控制得更高，而另一些区域的注入电流密度更低，以提供例如改善的饱和功率和/或噪声系数。 控制注入电流可以通过改变电流注入电极的电阻率来实现。 这又可以通过以沿设备长度改变串联电阻的方式在电流注入金属化之上的电介质层中图案化开口来实现。

    Semiconductor devices with curved waveguides and mode transformers
    8.
    发明授权
    Semiconductor devices with curved waveguides and mode transformers 有权
    具有弯曲波导和模式变压器的半导体器件

    公开(公告)号：US07190852B2

    公开(公告)日：2007-03-13

    申请号：US10270370

    申请日：2002-10-15

    申请人： Peter J. S. Heim ,  Mario Dagenais ,  Simarjeet Saini

    发明人： Peter J. S. Heim ,  Mario Dagenais ,  Simarjeet Saini

    IPC分类号： G01C3/14 ,  G01P3/36 ,  G01J5/48

    CPC分类号： G02B6/125 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/14 ,  G02B2006/12097 ,  G02B2006/12119 ,  G02B2006/12121 ,  G02B2006/12195 ,  H01S5/10 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/143 ,  H01S5/50

    摘要： Semiconductor devices having various combinations of curved waveguides and mode transformers are described. According to some exemplary embodiments, the mode transformer itself can be fabricated as all or part of the curved waveguide. For these exemplary embodiments it can be beneficial to use mode transformers whose active regions are relatively small to minimize losses associated with the introduced curvature, e.g., mode transformers that employ resonantly coupled waveguides and a tapered active waveguide in the mode transformation region. According to other exemplary embodiments, the mode transformer can be disposed along a straight portion of the waveguide, e.g., between the curved portion of the waveguide and the back facet. The present invention also provides flexibility in manufacturing by permitting different types of devices to be generated from a wafer depending upon where the devices are cleaved.

    摘要翻译： 描述了具有弯曲波导和模式变压器的各种组合的半导体器件。 根据一些示例性实施例，模式变压器本身可以被制造为弯曲波导的全部或部分。 对于这些示例性实施例，使用其有源区域相对较小的模式变压器可以是有益的，以使与引入的曲率相关联的损耗最小化，例如在模式转换区域中使用谐振耦合的波导和锥形有源波导的模式变压器。 根据其他示例性实施例，模式变压器可以沿着波导的直线部分布置，例如在波导的弯曲部分和后面之间。 本发明还通过根据装置被切割的位置从晶片产生不同类型的装置来提供制造灵活性。

    Methods and devices for amplifying optical signals using a depolarizer
    9.
    发明授权
    Methods and devices for amplifying optical signals using a depolarizer 有权
    使用消偏振器放大光信号的方法和装置

    公开(公告)号：US07002733B2

    公开(公告)日：2006-02-21

    申请号：US10353984

    申请日：2003-01-30

    申请人： Mario Dagenais ,  Stewart W Wilson ,  Anthony W. Yu ,  Peter J. S. Heim

    发明人： Mario Dagenais ,  Stewart W Wilson ,  Anthony W. Yu ,  Peter J. S. Heim

    IPC分类号： H04B10/12 ,  H01S3/00

    CPC分类号： H04B10/2914 ,  H01S5/0064 ,  H01S5/02284 ,  H01S5/5018

    摘要： An optical amplification device includes a depolarizer for reducing the polarization sensitivity requirements on an SOA by changing the input to the SOA from having an arbitrary (unknown) polarization state to a known (depolarized) state. The depolarizer receives an input optical signal and outputs a depolarized, optical signal, and a semiconductor optical amplifier (SOA) receives the depolarized optical signal and outputs an amplified optical signal.

    摘要翻译： 光放大装置包括消偏振器，用于通过将SOA的输入改变为具有任意（未知）极化状态到已知（去偏振）状态来降低对SOA的偏振敏感度要求。 去偏振器接收输入光信号并输出​​去极化的光信号，并且半导体光放大器（SOA）接收去极化的光信号并输出​​放大的光信号。

    Semiconductor optical device with improved efficiency and output beam characteristics
    10.
    发明授权
    Semiconductor optical device with improved efficiency and output beam characteristics 有权
    具有提高效率和输出光束特性的半导体光学器件

    公开(公告)号：US06600847B2

    公开(公告)日：2003-07-29

    申请号：US09985499

    申请日：2001-11-05

    申请人： Simarjeet Saini ,  Peter J. S. Heim

    发明人： Simarjeet Saini ,  Peter J. S. Heim

    IPC分类号： G02B612

    CPC分类号： G02B6/1228 ,  G02B2006/12078 ,  G02B2006/12195 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1064 ,  H01S5/22

    摘要： An optical device is provided comprising a gain section adapted to emit radiation at a radiation wavelength, a coupling section adjacent to the gain section for transitioning radiation between an active waveguide and a passive waveguide, and a passive section adjacent to the coupling section supporting a single-lobed optical mode in the passive waveguide at the radiation wavelength. The passive waveguide has an index of refraction and dimension such that the confinement of the radiation within the active waveguide in the gain section is reduced.

    摘要翻译： 提供了一种光学装置，其包括适于发射辐射波长的增益部分，与增益部分相邻的耦合部分，用于在有源波导和无源波导之间转换辐射;以及与耦合部分相邻的被动部分，其支撑单个 在无源波导中的放射波长的双光学模式。 无源波导具有折射率和尺寸，使得增益部分中的有源波导内的辐射的限制减小。