发明授权
US07160779B2 Method for making a semiconductor device having a high-k gate dielectric
有权
制造具有高k栅极电介质的半导体器件的方法
- 专利标题： Method for making a semiconductor device having a high-k gate dielectric
- 专利标题（中）： 制造具有高k栅极电介质的半导体器件的方法
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申请号： US11064648申请日： 2005-02-23
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公开(公告)号： US07160779B2公开(公告)日： 2007-01-09
- 发明人: Mark L. Doczy , Jack Kavalieros , Justin K. Brask , Matthew V. Metz , Suman Datta , Brian S. Doyle , Robert S. Chau
- 申请人： Mark L. Doczy , Jack Kavalieros , Justin K. Brask , Matthew V. Metz , Suman Datta , Brian S. Doyle , Robert S. Chau
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Michael D. Plimier
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer that contacts a metal oxide layer. The metal oxide layer is generated by forming a metal layer, then oxidizing the metal layer.