发明授权
US07160810B2 Method for forming interlayer insulation film in semiconductor device
有权
在半导体器件中形成层间绝缘膜的方法
- 专利标题： Method for forming interlayer insulation film in semiconductor device
- 专利标题（中）： 在半导体器件中形成层间绝缘膜的方法
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申请号： US10878317申请日： 2004-06-29
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公开(公告)号： US07160810B2公开(公告)日： 2007-01-09
- 发明人: Kang Sup Shin , Sang Wook Ryu
- 申请人： Kang Sup Shin , Sang Wook Ryu
- 申请人地址： KR Kyungki-Do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Kyungki-Do
- 代理机构： Mayer Brown Rowe & Maw LLP
- 优先权： KR10-2003-0096236 20031224
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
The present invention discloses a method for forming an interlayer insulation film in a semiconductor device, comprising the steps of: sequentially forming a porous low dielectric insulation film and a capping layer on the semiconductor substrate on which a few elements of the semiconductor device have been formed; and forming damascene patterns in the porous low dielectric insulation film by an etching process, and forming a protection film for closing pores exposed during the etching process at the same time.
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