发明授权
- 专利标题： Process for producing a semiconductor device
- 专利标题（中）： 半导体装置的制造方法
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申请号： US10937853申请日： 2004-09-10
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公开(公告)号： US07163781B2公开(公告)日： 2007-01-16
- 发明人: Takeshi Okino , Koji Asakawa , Naomi Shida , Toru Ushirogouchi , Satoshi Saito
- 申请人： Takeshi Okino , Koji Asakawa , Naomi Shida , Toru Ushirogouchi , Satoshi Saito
- 申请人地址： JP Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Kawasaki
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP10-269320 19980924; JP11-70591 19990316
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F7/30 ; G03F7/36
摘要：
According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.
公开/授权文献
- US20050031991A1 Process for producing a semiconductor device 公开/授权日：2005-02-10
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