发明授权
US07164598B2 Methods of operating magnetic random access memory device using spin injection and related devices
有权
使用自旋注入和相关器件操作磁性随机存取存储器件的方法
- 专利标题： Methods of operating magnetic random access memory device using spin injection and related devices
- 专利标题（中）： 使用自旋注入和相关器件操作磁性随机存取存储器件的方法
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申请号： US11201495申请日： 2005-08-11
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公开(公告)号： US07164598B2公开(公告)日： 2007-01-16
- 发明人: Won-Cheol Jeong , Ki-Nam Kim , Hong-Sik Jeong , Gi-Tae Jeong , Jae-Hyun Park
- 申请人： Won-Cheol Jeong , Ki-Nam Kim , Hong-Sik Jeong , Gi-Tae Jeong , Jae-Hyun Park
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Myers Bigel Sibley & Sajovec
- 优先权： KR10-2004-0063641 20040812
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C11/15
摘要：
Methods are provided for operating a magnetic random access memory device including a memory cell having a magnetic tunnel junction structure on a substrate. In particular, a writing current pulse may be provided through the magnetic tunnel junction structure, and a writing magnetic field pulse may be provided through the magnetic tunnel junction structure. In addition, at least a portion of the writing magnetic field pulse may be overlapping in time with respect to at least a portion of the writing current pulse, and at least a portion of the writing current pulse and/or at least a portion of the writing magnetic field pulse may be non-overlapping in time with respect to the other. Related devices are also discussed.