- 专利标题： Semiconductor device and method of manufacturing the same
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申请号： US11046722申请日： 2005-02-01
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公开(公告)号： US07166514B2公开(公告)日： 2007-01-23
- 发明人: Hee-Soo Kang , Jae-Man Yoon , Dong-Gun Park , Sang-Yeon Han , Young-Joon Ahn , Choong-Ho Lee
- 申请人： Hee-Soo Kang , Jae-Man Yoon , Dong-Gun Park , Sang-Yeon Han , Young-Joon Ahn , Choong-Ho Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Volentine Francos & Whitt, PLLC
- 优先权： KR10-2004-0006524 20040202
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A fin type MOSFET and a method of manufacturing the fin type MOSFET are disclosed. Gate structures in the fin type MOSFET are formed by a damascene process without a photolithography process. Impurities used to form a channel region are selectively implanted into portions of a semiconductor substrate adjacent to the gate structures.
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