发明授权
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10095101申请日： 2002-03-12
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公开(公告)号： US07166882B2公开(公告)日： 2007-01-23
- 发明人: Shunji Nakamura , Eiji Yoshida
- 申请人： Shunji Nakamura , Eiji Yoshida
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP.
- 优先权： JP2001-070628 20010313; JP2002-049422 20020226
- 主分类号： H01L31/119
- IPC分类号： H01L31/119
摘要：
The semiconductor device comprises: an insulation film 72 formed over a silicon substrate 10, an insulation film 78 formed on the insulation film 72 and having opening 82, and conductor 84 formed at least in the opening 82. Cavity 88 having the peripheral edges conformed to a configuration of the opening 82 is formed in the insulation film 72. The cavity 88 is formed in the region between the electrodes or the regions between the interconnection layers so as to decrease the dielectric constant between the electrodes or between the interconnection layers, whereby the parasitic capacitances of the region between the electrodes or the region between the interconnection layers can be drastically decreased, and consequently the semiconductor device can have higher speed.
公开/授权文献
- US20020145199A1 Semiconductor device and method for fabricating the same 公开/授权日：2002-10-10
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