发明授权
- 专利标题： Method for manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US11041981申请日： 2005-01-26
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公开(公告)号： US07169682B2公开(公告)日： 2007-01-30
- 发明人: Kazuhiro Hirohama , Masaru Tanaka , Takayoshi Hashimoto , Shinichi Sato , Hideyuki Kanzawa
- 申请人： Kazuhiro Hirohama , Masaru Tanaka , Takayoshi Hashimoto , Shinichi Sato , Hideyuki Kanzawa
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Nixon & Vanderhye P.C.
- 优先权： JP2004-021974 20040129; JP2004-298865 20041013
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/4763
摘要：
A method for manufacturing a semiconductor device comprising: a first step of successively forming a silicon oxide film and a silicon nitride film on a silicon substrate, followed by forming a silicon nitride oxide film or a multilayered film containing the silicon nitride oxide film on the silicon nitride film; a second step of forming a photoresist film having an opening portion located at the position corresponding to an element isolation area of the silicon substrate on the silicon nitride film or the multilayered film according to a photolithography method; a third step of forming a trench having a pair of tapered side surface portions on the confronting side surfaces thereof on the silicon nitride oxide film or the multilayered film by using the photoresist film as a mask, the tapered side surface portions being inclined toward the substrate side so as to approach each other; and a fourth step of patterning the silicon nitride film and the silicon oxide film by dry etching by using the photoresist film and the silicon nitride oxide film or the multilayered film as a mask.
公开/授权文献
- US20050170607A1 Method for manufacturing semiconductor device 公开/授权日：2005-08-04
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