Method for manufacturing semiconductor device
    1.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07169682B2

    公开(公告)日:2007-01-30

    申请号:US11041981

    申请日:2005-01-26

    IPC分类号: H01L21/76 H01L21/4763

    摘要: A method for manufacturing a semiconductor device comprising: a first step of successively forming a silicon oxide film and a silicon nitride film on a silicon substrate, followed by forming a silicon nitride oxide film or a multilayered film containing the silicon nitride oxide film on the silicon nitride film; a second step of forming a photoresist film having an opening portion located at the position corresponding to an element isolation area of the silicon substrate on the silicon nitride film or the multilayered film according to a photolithography method; a third step of forming a trench having a pair of tapered side surface portions on the confronting side surfaces thereof on the silicon nitride oxide film or the multilayered film by using the photoresist film as a mask, the tapered side surface portions being inclined toward the substrate side so as to approach each other; and a fourth step of patterning the silicon nitride film and the silicon oxide film by dry etching by using the photoresist film and the silicon nitride oxide film or the multilayered film as a mask.

    摘要翻译: 一种制造半导体器件的方法,包括:在硅衬底上依次形成氧化硅膜和氮化硅膜的第一步骤,然后在硅上形成氮氧化硅膜或含有氮氧化硅膜的多层膜 氮化膜; 根据光刻法在氮化硅膜或多层膜上形成具有位于对应于硅衬底的元件隔离区域的位置的开口部分的光致抗蚀剂膜的第二步骤; 第三步骤,通过使用光致抗蚀剂膜作为掩模,在氮化硅膜或多层膜上形成具有一对锥形侧面部分的沟槽,该锥形侧表面部分在其相对的侧表面上朝向衬底倾斜 以便彼此接近; 以及通过使用光致抗蚀剂膜和氮氧化硅膜或多层膜作为掩模通过干蚀刻图案化氮化硅膜和氧化硅膜的第四步骤。

    Method for manufacturing semiconductor device
    2.
    发明申请
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US20050170607A1

    公开(公告)日:2005-08-04

    申请号:US11041981

    申请日:2005-01-26

    摘要: A method for manufacturing a semiconductor device comprising: a first step of successively forming a silicon oxide film and a silicon nitride film on a silicon substrate, followed by forming a silicon nitride oxide film or a multilayered film containing the silicon nitride oxide film on the silicon nitride film; a second step of forming a photoresist film having an opening portion located at the position corresponding to an element isolation area of the silicon substrate on the silicon nitride film or the multilayered film according to a photolithography method; a third step of forming a trench having a pair of tapered side surface portions on the confronting side surfaces thereof on the silicon nitride oxide film or the multilayered film by using the photoresist film as a mask, the tapered side surface portions being inclined toward the substrate side so as to approach each other; and a fourth step of patterning the silicon nitride film and the silicon oxide film by dry etching by using the photoresist film and the silicon nitride oxide film or the multilayered film as a mask.

    摘要翻译: 一种制造半导体器件的方法,包括:在硅衬底上依次形成氧化硅膜和氮化硅膜的第一步骤,然后在硅上形成氮氧化硅膜或含有氮氧化硅膜的多层膜 氮化膜; 根据光刻法在氮化硅膜或多层膜上形成具有位于对应于硅衬底的元件隔离区域的位置的开口部分的光致抗蚀剂膜的第二步骤; 第三步骤,通过使用光致抗蚀剂膜作为掩模,在氮化硅膜或多层膜上形成具有一对锥形侧面部分的沟槽,该锥形侧表面部分在其相对的侧表面上朝向衬底倾斜 以便彼此接近; 以及通过使用光致抗蚀剂膜和氮氧化硅膜或多层膜作为掩模通过干蚀刻图案化氮化硅膜和氧化硅膜的第四步骤。

    Surface position measuring method and surface position measuring device
    5.
    发明授权
    Surface position measuring method and surface position measuring device 失效
    表面位置测量方法和表面位置测量装置

    公开(公告)号:US07617720B2

    公开(公告)日:2009-11-17

    申请号:US11794761

    申请日:2005-12-22

    IPC分类号: G12B21/08

    CPC分类号: G01Q30/04 G01Q60/32

    摘要: A surface position measuring method capable of measuring a position on a soft surface accurately and rapidly (real time), with low invasiveness. The method comprises the steps of measuring the spectrum of thermal oscillation of a cantilever with the distance between a cantilever tip and a sample surface being changed, extracting a fundamental mode component (spectrum area) from the obtained spectrum of thermal oscillation, and measuring a change in the spectrum area of thermal oscillation (spectrum area) with respect to the distance. A position at which the area of the cantilever thermal oscillation spectrum begins to change is evaluated as a position on the sample surface.

    摘要翻译: 一种表面位置测量方法,能够精确,快速(实时)测量软表面上的位置,具有低侵入性。 该方法包括以下步骤:测量悬臂的热振荡频谱,其中悬臂尖和样品表面之间的距离被改变,从所获得的热振荡谱提取基模分量(谱面积),并测量变化 在频率范围内的热振荡(频谱面积)相对于距离。 悬臂热振动频谱的面积开始变化的位置被评价为样品表面上的位置。

    Surface Position Measuring Method And Surface Position Measuring Device
    6.
    发明申请
    Surface Position Measuring Method And Surface Position Measuring Device 失效
    表面位置测量方法和表面位置测量装置

    公开(公告)号:US20080092640A1

    公开(公告)日:2008-04-24

    申请号:US11794761

    申请日:2005-12-22

    IPC分类号: G01B5/28

    CPC分类号: G01Q30/04 G01Q60/32

    摘要: A surface position measuring method capable of measuring a position on a soft surface accurately and rapidly (real time), with low invasiveness. The method comprises the steps of measuring the spectrum of thermal oscillation of a cantilever with the distance between a cantilever tip and a sample surface being changed, extracting a fundamental mode component (spectrum area) from the obtained spectrum of thermal oscillation, and measuring a change in the spectrum area of thermal oscillation (spectrum area) with respect to the distance. A position at which the area of the cantilever thermal oscillation spectrum begins to change is evaluated as a position on the sample surface.

    摘要翻译: 一种表面位置测量方法,能够精确,快速(实时)测量软表面上的位置,具有低侵入性。 该方法包括以下步骤:测量悬臂的热振荡频谱,其中悬臂尖和样品表面之间的距离被改变,从所获得的热振荡谱提取基模分量(谱面积),并测量变化 在频率范围内的热振荡(频谱面积)相对于距离。 悬臂热振动频谱的面积开始变化的位置被评价为样品表面上的位置。

    Path alarm processing method and device
    7.
    发明申请
    Path alarm processing method and device 审中-公开
    路径报警处理方法及装置

    公开(公告)号:US20070230359A1

    公开(公告)日:2007-10-04

    申请号:US11485854

    申请日:2006-07-13

    申请人: Masaru Tanaka

    发明人: Masaru Tanaka

    IPC分类号: H04J3/14

    CPC分类号: H04J3/14

    摘要: A path alarm processing method and device perform an alarm mask designation for an ADMIN_STATUS object of a GMPLS path message used upon path setup, and an alarm mask release designation for unused bits of a Sub-TLV object additionally generated. When an alarm generation and its recovery are recognized during alarm monitoring, the alarm mask release designation is confirmed to release an alarm mask. As the above-mentioned alarm mask release designation, at least any one of a lapse of a fixed time by a timer after a path setup, a predetermined message indicating an alarm mask release, and a predetermined number of receptions of the predetermined message can be designated.

    摘要翻译: 路径报警处理方法和设备对路径建立时使用的GMPLS路径消息的ADMIN_STATUS对象执行报警掩码指定,并且还附加生成Sub-TLV对象的未使用位的报警掩码释放指定。 在报警监视期间识别到报警生成及其恢复时,确认报警屏蔽释放指定以释放报警掩码。 作为上述警报掩膜释放指定,路径建立后的定时器经过了固定时间,指示警报掩蔽释放的预定消息和预定消息的预定次数的接收中的至少任一个可以是 指定

    Image forming process and image forming apparatus
    8.
    发明授权
    Image forming process and image forming apparatus 有权
    图像形成处理和图像形成装置

    公开(公告)号:US07177555B2

    公开(公告)日:2007-02-13

    申请号:US10757526

    申请日:2004-01-15

    IPC分类号: G03G15/08

    CPC分类号: G03G15/0877 G03G2215/085

    摘要: The image forming apparatus comprises a photoconductor, a latent electrostatic image forming unit for forming a latent electrostatic image on the photoconductor, a developing unit for developing the latent electrostatic image using a developer comprising a toner to form a visible image, a transfer unit for transferring the visible image to a recording medium, a cleaning unit for removing the developer remained on the photoconductor surface and a developer amount detection unit for detecting developer amount adhering to the photoconductor surface by a reflecting photosensor, wherein the developer stirring time per copy when one copy is made from an original, is 2 to 6 times the developer stirring time per copy when two or more copies are made from the original, wherein the toner comprises at least a binder resin and a wax, and the dynamic frictional coefficient of the toner is 0.15 to 0.45.

    摘要翻译: 图像形成装置包括光电导体,用于在感光体上形成静电潜像的静电潜像形成单元,用于使用包含调色剂的显影剂显影静电潜像以形成可见图像的显影单元,用于转印的转印单元 可见图像到记录介质,用于除去显影剂残留在感光体表面上的清洁单元和显影剂量检测单元,用于通过反射光电传感器检测粘附到感光体表面的显影剂量,其中当一个拷贝 由原件制成,当从原件制造两份或多份复印件时,为每份复印的显影剂搅拌时间的2至6倍,其中调色剂至少包含粘合剂树脂和蜡,并且调色剂的动态摩擦系数为 0.15〜0.45。

    Organic electroluminescence display device and producing method thereof
    10.
    发明授权
    Organic electroluminescence display device and producing method thereof 有权
    有机电致发光显示装置及其制造方法

    公开(公告)号:US06290563B1

    公开(公告)日:2001-09-18

    申请号:US09653379

    申请日:2000-09-01

    IPC分类号: H04B3310

    摘要: In manufacturing of an organic electroluminescence (EL) display device, after first electrodes are formed on a substrate, insulating films are formed on the first electrodes except regions corresponding to light emitting portions. Spacers are formed on the insulating films, and overhanging portions are formed so as to overhang the spacers. Thus, element isolating structure portions for isolating organic EL elements are formed. Then, organic EL films, second electrodes, and protecting films are sequentially formed between the spacers. In the thus formed light emitting portions of the organic EL display device, the bending angle of a bending portion of a pattern of the element isolating structure portion is larger than 90°.

    摘要翻译: 在有机电致发光(EL)显示装置的制造中,在基板上形成第一电极之后,除了对应于发光部分的区域之外,在第一电极上形成绝缘膜。 隔板形成在绝缘膜上,并且形成悬伸部分以使其间隔开。 因此,形成用于隔离有机EL元件的元件隔离结构部分。 然后,在间隔物之间​​依次形成有机EL膜,第二电极和保护膜。 在这样形成的有机EL显示装置的发光部分中,元件隔离结构部分的图案的弯曲部分的弯曲角度大于90°。