Invention Grant
US07169713B2 Atomic layer deposition (ALD) method with enhanced deposition rate
有权
原子层沉积（ALD）方法具有提高的沉积速率
- Patent Title: Atomic layer deposition (ALD) method with enhanced deposition rate
- Patent Title (中): 原子层沉积（ALD）方法具有提高的沉积速率
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Application No.: US10672778Application Date: 2003-09-26
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Publication No.: US07169713B2Publication Date: 2007-01-30
- Inventor: Chih-Ta Wu , Kuo-Yin Lin , Chia-Shiung Tsai
- Applicant: Chih-Ta Wu , Kuo-Yin Lin , Chia-Shiung Tsai
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Thomas, Kayden, Horstemeyer & Risley
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
An atomic layer deposition method for forming a microelectronic layer employs a reactor chamber pressure of greater than about 500 mtorr and more preferably from about 20 to about 50 torr. By employing a reactor chamber pressure within the foregoing range, the microelectronic layer is formed with an enhanced deposition rate while employing the atomic layer deposition method, due to a gas phase chemical vapor deposition component to the atomic layer deposition method.
Public/Granted literature
- US20050070041A1 Atomic layer deposition (ALD) method with enhanced deposition rate Public/Granted day:2005-03-31
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