发明授权
- 专利标题： Ferroelectric polymer memory with a thick interface layer
- 专利标题（中）： 铁电聚合物存储器，具有较厚的界面层
-
申请号： US10676795申请日： 2003-09-30
-
公开(公告)号： US07170122B2公开(公告)日： 2007-01-30
- 发明人: Mark R. Richards , Daniel C. Diana , Hitesh Windlass , Wayne K. Ford , Ebrahim Andideh
- 申请人： Mark R. Richards , Daniel C. Diana , Hitesh Windlass , Wayne K. Ford , Ebrahim Andideh
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L27/10
- IPC分类号： H01L27/10
摘要：
According to one aspect of the invention, a memory array and a method of constructing a memory array are provided. An insulating layer is formed on a semiconductor substrate. A first metal stack is then formed on the insulating layer. The first metal stack is etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. The polymeric layer has a surface with a plurality of roughness formations. A second metal stack is formed on the polymeric layer with an interface layer, which is thicker than the heights of the roughness formations. Then the second metal stack is etched to form second metal lines. Memory cells are formed wherever a second metal line extends over a first metal line.
公开/授权文献
信息查询
IPC分类:
