发明授权
- 专利标题： Semiconductor apparatus
- 专利标题（中）： 半导体装置
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申请号： US11115407申请日： 2005-04-27
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公开(公告)号： US07170177B2公开(公告)日： 2007-01-30
- 发明人: Yoshihiro Nakata , Katsumi Suzuki , Iwao Sugiura , Ei Yano
- 申请人： Yoshihiro Nakata , Katsumi Suzuki , Iwao Sugiura , Ei Yano
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A disclosed semiconductor apparatus includes a substrate, a first insulating layer formed on the substrate, the first insulating layer including a Cu wiring part, and a second insulating layer formed on the substrate, the second insulating layer including a Cu via plug part electrically connected to the Cu wiring part. The first insulating layer is a porous insulating film having an elastic modulus of 5 GPa or more and a hardness of 0.6 GPa or more, and the second insulating layer has an elastic modulus of no less than 10 GPa and a hardness no less than 1 GPa.
公开/授权文献
- US20050253271A1 Semiconductor apparatus 公开/授权日：2005-11-17
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