公开(公告)号：US06958525B2

公开(公告)日：2005-10-25

申请号：US10448092

申请日：2003-05-30

申请人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

发明人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

IPC分类号： B32B7/02 ,  B32B27/00 ,  C08K5/13 ,  C08L83/04 ,  C08L83/16 ,  C09D183/04 ,  C09D183/16 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/58 ,  H01L23/48

CPC分类号： C09D183/04 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76837 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  C08L83/00 ,  H01L2924/00

摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.

摘要翻译： 低介电膜形成材料含有溶解在溶剂中的硅氧烷树脂和聚碳硅烷。 通过使用该溶液，形成含有与硅氧烷树脂结合的硅氧烷树脂和聚碳硅烷的低电介质膜。 提供了适用于层间绝缘膜材料的低介电膜材料。 还提供了具有低介电常数膜和高可靠性的半导体器件。

公开(公告)号：US07235866B2

公开(公告)日：2007-06-26

申请号：US11205128

申请日：2005-08-17

申请人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

发明人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

IPC分类号： H01L23/58 ,  H01L23/48

CPC分类号： C09D183/04 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76837 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  C08L83/00 ,  H01L2924/00

摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.

摘要翻译： 低介电膜形成材料含有溶解在溶剂中的硅氧烷树脂和聚碳硅烷。 通过使用该溶液，形成含有与硅氧烷树脂结合的硅氧烷树脂和聚碳硅烷的低电介质膜。 提供了适用于层间绝缘膜材料的低介电膜材料。 还提供了具有低介电常数膜和高可靠性的半导体器件。

公开(公告)号：US07170177B2

公开(公告)日：2007-01-30

申请号：US11115407

申请日：2005-04-27

申请人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

发明人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

IPC分类号： H01L23/48

CPC分类号： H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/00

摘要： A disclosed semiconductor apparatus includes a substrate, a first insulating layer formed on the substrate, the first insulating layer including a Cu wiring part, and a second insulating layer formed on the substrate, the second insulating layer including a Cu via plug part electrically connected to the Cu wiring part. The first insulating layer is a porous insulating film having an elastic modulus of 5 GPa or more and a hardness of 0.6 GPa or more, and the second insulating layer has an elastic modulus of no less than 10 GPa and a hardness no less than 1 GPa.

摘要翻译： 所公开的半导体装置包括基板，形成在基板上的第一绝缘层，包括Cu布线部分的第一绝缘层和形成在基板上的第二绝缘层，第二绝缘层包括Cu经由插塞部分，电连接到 Cu接线部分。 第一绝缘层是具有5GPa以上的弹性模量和0.6GPa以上的硬度的多孔绝缘膜，第二绝缘层的弹性模量不小于10GPa，硬度不小于1GPa 。

公开(公告)号：US20060022357A1

公开(公告)日：2006-02-02

申请号：US11205128

申请日：2005-08-17

申请人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

发明人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

IPC分类号： H01L23/29 ,  H01L21/31

CPC分类号： C09D183/04 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76837 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  C08L83/00 ,  H01L2924/00

摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.

公开(公告)号：US06727515B2

公开(公告)日：2004-04-27

申请号：US10102723

申请日：2002-03-22

申请人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

发明人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

IPC分类号： H01L3524

CPC分类号： H01L21/02126 ,  C09D183/14 ,  C09D183/16 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76807 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： Porous insulation films 28, 40, 50 are formed of an insulation forming material including a silicon compound having a skeleton containing C—C bonds, a pore forming compound which is decomposed or evaporated by a heat treatment, and a solvent which dissolves the silicon compound with the pore forming compound, whereby the porous insulation film can have good mechanical strength and low dielectric constant.

摘要翻译： 多孔绝缘膜28,40,50由包含具有含有CC键的骨架的硅化合物，通过热处理分解或蒸发的成孔化合物的绝缘形成材料和溶解硅化合物的溶剂形成， 多孔绝缘膜可以具有良好的机械强度和低介电常数。

公开(公告)号：US06613834B2

公开(公告)日：2003-09-02

申请号：US09797865

申请日：2001-03-05

申请人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

发明人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

IPC分类号： C08L8304

CPC分类号： C09D183/04 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76837 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  C08L83/00 ,  H01L2924/00

摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.

公开(公告)号：US20050253271A1

公开(公告)日：2005-11-17

申请号：US11115407

申请日：2005-04-27

申请人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

发明人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

IPC分类号： H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48

CPC分类号： H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/00

摘要： A disclosed semiconductor apparatus includes a substrate, a first insulating layer formed on the substrate, the first insulating layer including a Cu wiring part, and a second insulating layer formed on the substrate, the second insulating layer including a Cu via plug part electrically connected to the Cu wiring part. The first insulating layer is a porous insulating film having an elastic modulus of 5 GPa or more and a hardness of 0.6 GPa or more, and the second insulating layer has an elastic modulus of no less than 10 GPa and a hardness no less than 1 GPa.

摘要翻译： 所公开的半导体装置包括基板，形成在基板上的第一绝缘层，包括Cu布线部分的第一绝缘层和形成在基板上的第二绝缘层，第二绝缘层包括Cu经由插塞部分，电连接到 Cu接线部分。 第一绝缘层是具有5GPa以上的弹性模量和0.6GPa以上的硬度的多孔绝缘膜，第二绝缘层的弹性模量不小于10GPa，硬度不小于1GPa 。

公开(公告)号：US06780498B2

公开(公告)日：2004-08-24

申请号：US09983951

申请日：2001-10-26

申请人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

发明人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

IPC分类号： B32B326

CPC分类号： H01L21/76807 ,  C09D183/04 ,  C09D183/14 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76835 ,  H01L2924/0002 ,  Y10S428/901 ,  Y10T428/249953 ,  Y10T428/249969 ,  Y10T428/249978 ,  Y10T428/249979 ,  Y10T428/2839 ,  C08L83/00 ,  H01L2924/00

摘要： A composition comprising a siloxane resin, a silicon compound substantially consisting of silicon, carbon and hydrogen, wherein the number ratio of carbon to silicon atoms forming an —X— bond (wherein X is (C)m (where m is an integer in the range of from 1 to 3), or a substituted or unsubstituted aromatic group with 9 or less carbon atoms) in the main chain of one molecule is in the range of from 2:1 to 12:1, and a solvent, is subjected to a heat treatment to form a low dielectric constant film. Accordingly, a low dielectric constant film having excellent resistance against chemicals and excellent moisture resistance is provided. A semiconductor integrated circuit having a fast response can be produced by using the film.

摘要翻译： 包含硅氧烷树脂，基本上由硅，碳和氢组成的硅化合物的组合物，其中形成-X-键的碳与硅原子的数量比（其中X是（C）m（其中m是（C） 范围为1至3）或者具有9个或更少碳原子的取代或未取代的芳族基团）在一个分子的主链中的范围为2:1至12:1，并且对溶剂进行 形成低介电常数膜的热处理。 因此，提供了具有优异的抗化学性和优异的耐湿性的低介电常数膜。 可以通过使用该膜来制造具有快速响应的半导体集成电路。

公开(公告)号：US08786089B2

公开(公告)日：2014-07-22

申请号：US13359075

申请日：2012-01-26

申请人： Kazuto Watanabe ,  Atsushi Matsushita ,  Hiroshi Horikoshi ,  Iwao Sugiura ,  Yuuji Nishimura ,  Syota Yamabata

发明人： Kazuto Watanabe ,  Atsushi Matsushita ,  Hiroshi Horikoshi ,  Iwao Sugiura ,  Yuuji Nishimura ,  Syota Yamabata

IPC分类号： H01L23/48

CPC分类号： H01L21/76841 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L2224/02166 ,  H01L2224/48463 ,  H01L2924/01021 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/3025 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer.

摘要翻译： 半导体器件的制造方法包括在半导体衬底的一个表面侧上暴露由包括具有不同标准电极电位的两种或更多种类型的金属的合金形成的布线层，并且执行等离子体处理，其允许由 包括氮气和惰性气体的混合气体或由包含氮气的气体产生的等离子体，以照射包括布线层的暴露表面的范围。

公开(公告)号：US08759933B2

公开(公告)日：2014-06-24

申请号：US12788503

申请日：2010-05-27

申请人： Yoshinori Toumiya ,  Kiyotaka Tabuchi ,  Yasuyuki Shiga ,  Iwao Sugiura ,  Naoyuki Miyashita ,  Masanori Iwasaki ,  Katsunori Kokubun ,  Tomohiro Yamazaki

发明人： Yoshinori Toumiya ,  Kiyotaka Tabuchi ,  Yasuyuki Shiga ,  Iwao Sugiura ,  Naoyuki Miyashita ,  Masanori Iwasaki ,  Katsunori Kokubun ,  Tomohiro Yamazaki

IPC分类号： H01L21/02 ,  H01L27/146 ,  H01L31/0232

CPC分类号： H01L21/02263 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/02327

摘要： Disclosed herein is a solid-state image pickup element, including: a semiconductor substrate; a pixel portion which is formed on the semiconductor substrate and in which a plurality of pixels each having a photoelectric conversion portion are arranged; an insulating layer formed on the semiconductor substrate so as to cover the photoelectric conversion portion; a hole portion formed in the insulating layer and above the photoelectric conversion portion; a silicon nitride layer formed so as to cover a bottom surface and a side surface of the hole portion; and a buried layer formed on the silicon nitride layer, wherein the silicon nitride layer is formed so as to contain a silicon nitride formed by utilizing an atomic layer deposition method.

摘要翻译： 本文公开了一种固态摄像元件，包括：半导体衬底; 形成在半导体衬底上并且其中布置有多个具有光电转换部分的像素的像素部分; 形成在所述半导体基板上以覆盖所述光电转换部的绝缘层; 形成在所述绝缘层中并且在所述光电转换部分上方的孔部; 形成为覆盖所述孔部的底面和侧面的氮化硅层; 以及形成在氮化硅层上的掩埋层，其中形成氮化硅层以便容纳通过利用原子层沉积法形成的氮化硅。