Provided is a method for forming a fine pattern of a semiconductor device by controlling the amount of flow of a resist pattern, including forming a resist pattern having a predetermined pattern distance on a material layer to be etched, forming a flow control barrier layer on the resist pattern to control the amount of flow during a subsequent resist flow process and to make the profile of the flowed pattern be vertical, optionally forming the flow control barrier layer by coating a material including a water-soluble high-molecular material and a crosslinking agent on the resist pattern, mixing and baking the coated material layer, and processing the resultant structure using deionized water, carrying out the flow resist process to form a hyperfine pattern and etching the lower material layer, and thereby forming fine patterns having the shape of contact holes or lines and spaces to have a critical dimension of about 100 nm or less, even with use of a KrF resist.