发明授权
- 专利标题： Method for making a semiconductor device that includes a metal gate electrode
- 专利标题（中）： 制造包括金属栅电极的半导体器件的方法
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申请号： US10936114申请日： 2004-09-07
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公开(公告)号： US07176090B2公开(公告)日： 2007-02-13
- 发明人: Justin K. Brask , Jack Kavalieros , Mark L. Doczy , Matthew V. Metz , Suman Datta , Uday Shah , Brian S. Doyle , Robert S. Chau
- 申请人： Justin K. Brask , Jack Kavalieros , Mark L. Doczy , Matthew V. Metz , Suman Datta , Uday Shah , Brian S. Doyle , Robert S. Chau
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Rahul D. Engineer
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method for making a semiconductor device is described. That method comprises forming on a substrate a dielectric layer and a sacrificial structure that comprises a first layer and a second layer, such that the second layer is formed on the first layer and is wider than the first layer. After the sacrificial structure is removed to generate a trench, a metal gate electrode is formed within the trench.