- 专利标题： Semiconductor device and manufacturing method thereof
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申请号： US10684399申请日： 2003-10-15
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公开(公告)号： US07176121B2公开(公告)日： 2007-02-13
- 发明人: Kazutoshi Ohmori , Tsuyoshi Tamaru , Naohumi Ohashi , Kiyohiko Sato , Hiroyuki Maruyama
- 申请人： Kazutoshi Ohmori , Tsuyoshi Tamaru , Naohumi Ohashi , Kiyohiko Sato , Hiroyuki Maruyama
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JPP2002-302689 20021017; JPP2003-310953 20030903
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.
公开/授权文献
- US20040192032A1 Semiconductor device and manufacturing method thereof 公开/授权日：2004-09-30
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