公开(公告)号：US5357166A

公开(公告)日：1994-10-18

申请号：US870088

申请日：1992-04-17

申请人： Takashi Sugahara ,  Kiyohiko Sato

发明人： Takashi Sugahara ,  Kiyohiko Sato

IPC分类号： H01J29/06 ,  H01J29/86 ,  H01J29/88

CPC分类号： H01J29/868 ,  H01J29/06 ,  H01J29/88 ,  H01J2229/0046

摘要： In a cathode-ray tube, in order to readily and inexpensively reduce an alternating electric field irradiated by a deflection yoke to a front of the cathode-ray tube through a funnel part and a face panel, a conductive film for forming an electric field shield is formed from a neck part to a cone part of a glass bulb and is electrically connected to another conductive film formed on a funnel body part. The deflection yoke is mounted on the conductive film via an insulation sheet interposed therebetween. The conductive film is grounded to form an equipotential surface of 0 V in front of the deflection yoke. A transparent conductive film can be also formed on the external surface of the face panel to raise the reduction of the alternating electric field.

摘要翻译： 在阴极射线管中，为了容易且廉价地通过漏斗部和面板将由偏转线圈照射的交变电场减少到阴极射线管的前方，形成电场屏蔽的导电膜 由玻璃灯泡的颈部到锥形部分形成，并且与形成在漏斗体部分上的另一导电膜电连接。 偏转线圈通过绝缘片安装在导电膜上。 导电膜接地以在偏转线圈前面形成0V的等电位面。 也可以在面板的外表面上形成透明导电膜，以提高交变电场的减少。

公开(公告)号：US5122819A

公开(公告)日：1992-06-16

申请号：US777507

申请日：1991-10-18

申请人： Kiyohiko Sato

发明人： Kiyohiko Sato

IPC分类号： G02B3/00 ,  G02B3/08 ,  H01J9/227

CPC分类号： G02B3/0043 ,  G02B3/00 ,  G02B3/005 ,  G02B3/08 ,  H01J9/2273

摘要： A compound corrective lens for use in light exposure in the manufacture of color CRTs includes plurality of lens elements, each having an elementary surface, formed in combination a compound surface on the exit side of the lens, with steps formed at the boundaries between adjacent lens elements to connect edges of the elementary surfaces of the adjacent lens elements. The surfaces are so arranged that the steps falls from the elementary surface on the inner side closest to the optical axis of the lens) to the elementary surface on the outer side (farthest from the optical axis). With such an arrangement, the adverse effect of the steps covered with a light-absorbing layer is reduced. That is, the effective areas of the elementary surfaces are enlarged, and thus the distortion of the lens surface is suppressed.

摘要翻译： 在彩色CRT制造中用于曝光的复合矫正透镜包括多个透镜元件，每个透镜元件具有基本表面，其组合在透镜的出射侧上的复合表面，以及在相邻透镜之间的边界处形成的台阶 用于连接相邻透镜元件的基本表面的边缘的元件。 这些表面被布置成使得台阶从最靠近透镜的光轴的内侧的基本表面落到外侧（距离光轴最远）的基本表面。 通过这种布置，减少了用光吸收层覆盖的步骤的不利影响。 也就是说，基本表面的有效面积被扩大，因此抑制了透镜表面的变形。

公开(公告)号：US08012871B2

公开(公告)日：2011-09-06

申请号：US12771494

申请日：2010-04-30

申请人： Kazutoshi Ohmori ,  Tsuyoshi Tamaru ,  Naohumi Ohashi ,  Kiyohiko Sato ,  Hiroyuki Maruyama

发明人： Kazutoshi Ohmori ,  Tsuyoshi Tamaru ,  Naohumi Ohashi ,  Kiyohiko Sato ,  Hiroyuki Maruyama

IPC分类号： H01L21/4763

CPC分类号： H01L21/76829 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76832 ,  H01L21/7684 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.

摘要翻译： 提供一种半导体器件及其制造方法，用于提高布线层之间的膜和通孔层之间的膜由具有低介电常数的SiOC膜构成的铜镶嵌线的可靠性的提高。 布线层之间的膜，布线层之间的膜和通孔层之间的膜分别由SiOC膜构成，并且阻挡绝缘膜和帽绝缘膜由SiCN膜A和SiC膜的层压膜构成 通过这样做，可以减少布线层之间的膜，布线层之间的膜和通孔层之间的膜的漏电流，并且还可以提高布线层之间的膜的粘附性，膜 布线层之间的通孔层与阻挡绝缘膜和帽绝缘膜之间的膜。

公开(公告)号：US20100210107A1

公开(公告)日：2010-08-19

申请号：US12771494

申请日：2010-04-30

申请人： Kazutoshi Ohmori ,  Tsuyoshi Tamaru ,  Naohumi Ohashi ,  Kiyohiko Sato ,  Hiroyuki Maruyama

发明人： Kazutoshi Ohmori ,  Tsuyoshi Tamaru ,  Naohumi Ohashi ,  Kiyohiko Sato ,  Hiroyuki Maruyama

IPC分类号： H01L21/768

CPC分类号： H01L21/76829 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76832 ,  H01L21/7684 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.

摘要翻译： 提供一种半导体器件及其制造方法，用于提高布线层之间的膜和通孔层之间的膜由具有低介电常数的SiOC膜构成的铜镶嵌线的可靠性的提高。 布线层之间的膜，布线层之间的膜和通孔层之间的膜分别由SiOC膜构成，并且阻挡绝缘膜和帽绝缘膜由SiCN膜A和SiC膜的层压膜构成 通过这样做，可以减少布线层之间的膜，布线层之间的膜和通孔层之间的膜的漏电流，并且还可以提高布线层之间的膜的粘附性，膜 布线层之间的通孔层与阻挡绝缘膜和帽绝缘膜之间的膜。

公开(公告)号：US07176121B2

公开(公告)日：2007-02-13

申请号：US10684399

申请日：2003-10-15

申请人： Kazutoshi Ohmori ,  Tsuyoshi Tamaru ,  Naohumi Ohashi ,  Kiyohiko Sato ,  Hiroyuki Maruyama

发明人： Kazutoshi Ohmori ,  Tsuyoshi Tamaru ,  Naohumi Ohashi ,  Kiyohiko Sato ,  Hiroyuki Maruyama

IPC分类号： H01L21/4763

CPC分类号： H01L23/53238 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.

公开(公告)号：US20110291280A1

公开(公告)日：2011-12-01

申请号：US13206906

申请日：2011-08-10

申请人： Kazutoshi OHMORI ,  Tsuyoshi TAMARU ,  Naohumi OHASHI ,  Kiyohiko SATO ,  Hiroyuki MARUYAMA

发明人： Kazutoshi OHMORI ,  Tsuyoshi TAMARU ,  Naohumi OHASHI ,  Kiyohiko SATO ,  Hiroyuki MARUYAMA

IPC分类号： H01L23/485

CPC分类号： H01L21/76829 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76832 ,  H01L21/7684 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.

摘要翻译： 提供一种半导体器件及其制造方法，用于提高布线层之间的膜和通孔层之间的膜由具有低介电常数的SiOC膜构成的铜镶嵌线的可靠性的提高。 布线层之间的膜，布线层之间的膜和通孔层之间的膜分别由SiOC膜构成，并且阻挡绝缘膜和帽绝缘膜由SiCN膜A和SiC膜的层压膜构成 通过这样做，可以减少布线层之间的膜，布线层之间的膜和通孔层之间的膜的漏电流，并且还可以提高布线层之间的膜的粘附性，膜 布线层之间的通孔层与阻挡绝缘膜和帽绝缘膜之间的膜。

公开(公告)号：US07723849B2

公开(公告)日：2010-05-25

申请号：US11646434

申请日：2006-12-28

申请人： Kazutoshi Ohmori ,  Tsuyoshi Tamaru ,  Naohumi Ohashi ,  Kiyohiko Sato ,  Hiroyuki Maruyama

发明人： Kazutoshi Ohmori ,  Tsuyoshi Tamaru ,  Naohumi Ohashi ,  Kiyohiko Sato ,  Hiroyuki Maruyama

IPC分类号： H01L23/48

CPC分类号： H01L21/76829 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76832 ,  H01L21/7684 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.

摘要翻译： 提供一种半导体器件及其制造方法，用于提高布线层之间的膜和通孔层之间的膜由具有低介电常数的SiOC膜构成的铜镶嵌线的可靠性的提高。 布线层之间的膜，布线层之间的膜和通孔层之间的膜分别由SiOC膜构成，并且阻挡绝缘膜和帽绝缘膜由SiCN膜A和SiC膜的层压膜构成 通过这样做，可以减少布线层之间的膜，布线层之间的膜和通孔层之间的膜的漏电流，并且还可以提高布线层之间的膜的粘附性，膜 布线层之间的通孔层与阻挡绝缘膜和帽绝缘膜之间的膜。

公开(公告)号：US20070105369A1

公开(公告)日：2007-05-10

申请号：US11646434

申请日：2006-12-28

申请人： Kazutoshi Ohmori ,  Tsuyoshi Tamaru ,  Naohumi Ohashi ,  Kiyohiko Sato ,  Hiroyuki Maruyama

发明人： Kazutoshi Ohmori ,  Tsuyoshi Tamaru ,  Naohumi Ohashi ,  Kiyohiko Sato ,  Hiroyuki Maruyama

IPC分类号： H01L21/4763

CPC分类号： H01L21/76829 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76832 ,  H01L21/7684 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.

摘要翻译： 提供一种半导体器件及其制造方法，用于提高布线层之间的膜和通孔层之间的膜由具有低介电常数的SiOC膜构成的铜镶嵌线的可靠性的提高。 布线层之间的膜，布线层之间的膜和通孔层之间的膜分别由SiOC膜构成，并且阻挡绝缘膜和帽绝缘膜由SiCN膜A和SiC膜的层压膜构成 通过这样做，可以减少布线层之间的膜，布线层之间的膜和通孔层之间的膜的漏电流，并且还可以提高布线层之间的膜的粘附性，膜 布线层之间的通孔层与阻挡绝缘膜和帽绝缘膜之间的膜。

公开(公告)号：US06368062B1

公开(公告)日：2002-04-09

申请号：US09613719

申请日：2000-07-11

申请人： Mototake Yagami ,  Kiyohiko Sato

发明人： Mototake Yagami ,  Kiyohiko Sato

IPC分类号： F04D2938

CPC分类号： F04D29/282 ,  F04D29/30 ,  Y10S416/03

摘要： The spring-back state of the blade press formed from the metallic thin plate is restricted to form the blade of wing sectional shape strictly in accordance with the design. The blade is formed into the wing sectional shape having a hollow inner part with both sides fixed to the upper plate and the lower plate being released under application of the press forming of the metallic thin plate. The blade is made such that the metallic thin plate (a) having a rectangular shape as seen from its top plan view with one side being a wing width (W) size is applied with a coining work, a number of linear deformation segments in parallel with the side of the wing width (W) size are properly spaced apart along a side crossing at right angle with the side of the wing width (W) size in side-by-side relation, the direction crossing at a right angle with the side of the wing width (W) size of the metallic thin plate (a) is formed into the curved surface of predetermined curvature and then a transfer of the recovering force generated at each of the belt-like plates between the linear deformation segments is shut off at the linear deformation segments so as to restrict influence against the entire metallic thin plate (a).

摘要翻译： 由金属薄板形成的叶片压制机的回弹状态受到限制，严格按照设计形成机翼截面形状的叶片。 叶片被形成为具有中空内部的翼形截面形状，两侧固定到上板，并且下板在施加金属薄板的冲压成形时被释放。 叶片被制成使得从顶部平面图看到的具有矩形形状的金属薄板（a），其一侧是机翼宽度（W）尺寸，施加有压印作业，并行地形成多个线性变形段 翼的宽度（W）尺寸的侧面沿着与翼的宽度（W）尺寸的侧面成直角交叉的一侧适当地间隔开，并且垂直于与 将金属薄板（a）的机翼宽度（W）尺寸的一侧形成为预定曲率的曲面，然后关闭在线性变形段之间的每个带状板处产生的回复力的传递 在线性变形段处脱开，以限制对整个金属薄板（a）的影响。