发明授权
- 专利标题： Selective nitride liner formation for shallow trench isolation
- 专利标题（中）： 用于浅沟槽隔离的选择性氮化物衬垫形成
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申请号： US10970090申请日： 2004-10-21
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公开(公告)号： US07176138B2公开(公告)日： 2007-02-13
- 发明人: Chien-Hao Chen , Vincent S. Chang , Ji-Yi Yang , Chia-Lin Chen , Tze-Liang Lee
- 申请人： Chien-Hao Chen , Vincent S. Chang , Ji-Yi Yang , Chia-Lin Chen , Tze-Liang Lee
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Tung & Associates
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
A method for forming a divot free nitride lined shallow trench isolation (STI) feature including providing a substrate including an STI trench extending through an uppermost hardmask layer into a thickness of the substrate exposing the substrate portions; selectively forming a first insulating layer lining the STI trench over said exposed substrate portions only; backfilling the STI trench with a second insulating layer; planarizing the second insulating layer; and, carrying out a wet etching process to remove the uppermost hardmask layer.
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