Selective nitride liner formation for shallow trench isolation

Invention Grant

US07176138B2 Selective nitride liner formation for shallow trench isolation 有权

Title translation: 用于浅沟槽隔离的选择性氮化物衬垫形成

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Patent Title: Selective nitride liner formation for shallow trench isolation
Patent Title (中): 用于浅沟槽隔离的选择性氮化物衬垫形成
Application No.: US10970090

Application Date: 2004-10-21
Publication No.: US07176138B2

Publication Date: 2007-02-13
Inventor: Chien-Hao Chen , Vincent S. Chang , Ji-Yi Yang , Chia-Lin Chen , Tze-Liang Lee
Applicant: Chien-Hao Chen , Vincent S. Chang , Ji-Yi Yang , Chia-Lin Chen , Tze-Liang Lee
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Tung & Associates
Main IPC: H01L21/311
IPC: H01L21/311

Selective nitride liner formation for shallow trench isolation

Abstract:

A method for forming a divot free nitride lined shallow trench isolation (STI) feature including providing a substrate including an STI trench extending through an uppermost hardmask layer into a thickness of the substrate exposing the substrate portions; selectively forming a first insulating layer lining the STI trench over said exposed substrate portions only; backfilling the STI trench with a second insulating layer; planarizing the second insulating layer; and, carrying out a wet etching process to remove the uppermost hardmask layer.

Abstract(Chinese):

一种用于形成无自由度的氮化物衬底浅沟槽隔离（STI）特征的方法，包括提供包括延伸穿过最上面的硬掩模层的STI沟槽的衬底，暴露衬底部分的衬底的厚度; 仅在所述暴露的衬底部分上选择性地形成衬在STI沟槽上的第一绝缘层; 用第二绝缘层回填STI沟槽; 平面化第二绝缘层; 并进行湿蚀刻处理以去除最上面的硬掩模层。

Public/Granted literature

US20060099771A1 Selective nitride liner formation for shallow trench isolation Public/Granted day:2006-05-11

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀