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发明授权
US07176533B2 Semiconductor devices having contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus 有权
具有接触插塞的半导体器件包括掺杂有比磷少的扩散系数的杂质的多晶硅

Semiconductor devices having contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus
摘要：
Forming a semiconductor device can include forming an insulating layer on a semiconductor substrate including a conductive region thereof, wherein the insulating layer has a contact hole therein exposing a portion of the conductive region. A polysilicon contact plug can be formed in the contact hole wherein at least a portion of the polysilicon contact plug is doped with an element having a diffusion coeffient that is less than a diffusion coefficient of phosphorus (P). Related structures are also discussed.
摘要（中）：

形成半导体器件可以包括在包括其导电区域的半导体衬底上形成绝缘层，其中绝缘层具有暴露导电区域的一部分的接触孔。 可以在接触孔中形成多晶硅接触插塞，其中多晶硅接触插塞的至少一部分掺杂有具有小于磷（P）的扩散系数的扩散系数的元件。 还讨论了相关结构。

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