发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10697941申请日： 2003-10-31
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公开(公告)号： US07180093B2公开(公告)日： 2007-02-20
- 发明人: Toru Takayama , Junya Maruyama , Yumiko Ohno , Masakazu Murakami , Toshiji Hamatani , Hideaki Kuwabara , Shunpei Yamazaki
- 申请人： Toru Takayama , Junya Maruyama , Yumiko Ohno , Masakazu Murakami , Toshiji Hamatani , Hideaki Kuwabara , Shunpei Yamazaki
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2002-320270 20021101
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L29/15
摘要：
The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials. In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.
公开/授权文献
- US20040232459A1 Semiconductor device and manufacturing method thereof 公开/授权日：2004-11-25
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