发明授权
US07184301B2 Magnetic memory cell and magnetic random access memory using the same
有权
磁存储单元和磁性随机存取存储器使用相同
- 专利标题: Magnetic memory cell and magnetic random access memory using the same
- 专利标题(中): 磁存储单元和磁性随机存取存储器使用相同
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申请号: US10702655申请日: 2003-11-07
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公开(公告)号: US07184301B2公开(公告)日: 2007-02-27
- 发明人: Tadahiko Sugibayashi , Noboru Sakimura , Takeshi Honda
- 申请人: Tadahiko Sugibayashi , Noboru Sakimura , Takeshi Honda
- 申请人地址: JP Tokyo
- 专利权人: NEC Corporation
- 当前专利权人: NEC Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Young & Thompson
- 优先权: JP2002-382778 20021127; JP2003-124959 20030430
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
In a magnetic random access memory, a memory cell includes a magnetic field generating section having an extension wiring line, and connected with a first selected bit line, a conductive pattern, and a magnetic resistance element having a spontaneous magnetization, storing a data and connected between the extension wiring line and the conductive pattern. In a data write operation into the memory cell, a write data is written in the magnetic resistance element of the memory cell by a write electric current which flows through the extension wiring line of the magnetic field generating section of the memory cell, and a value of the write data is determined based on a direction of the write electric current. In a data read operation from the memory cell, a read electric current flows through the extension wiring line of the magnetic field generating section and the magnetic resistance element in the memory cell. A memory cell array section includes the memory cells arranged in a matrix, and each memory cell is connected with a first word line and a first bit line at least, the gate section.