发明授权
- 专利标题： Semiconductor device and manufacturing method of the same
- 专利标题（中）： 半导体器件及其制造方法相同
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申请号： US11103470申请日： 2005-04-12
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公开(公告)号： US07186598B2公开(公告)日： 2007-03-06
- 发明人: Jun Yamauchi , Nobutoshi Aoki
- 申请人： Jun Yamauchi , Nobutoshi Aoki
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2002-278088 20020924
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L29/76
摘要：
A semiconductor device having a semiconductor layer, includes: a first impurity atom having a covalent bond radius larger than a minimum radius of a covalent bond of a semiconductor constituent atom of a semiconductor layer; and a second impurity atom having a covalent bond radius smaller than a maximum radius of the covalent bond of the semiconductor constituent atom; wherein the first and second impurity atoms are arranged in a nearest neighbor lattice site location and at least one of the first and second impurity atoms is electrically active.