发明授权
- 专利标题： Ferroelectric material, ferroelectric film and method of manufacturing the same, ferroelectric capacitor and method of manufacturing the same, ferroelectric memory, and piezoelectric device
- 专利标题（中）： 铁电材料，铁电体膜及其制造方法，铁电电容器及其制造方法，铁电存储器及压电元件
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申请号： US10807357申请日： 2004-03-24
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公开(公告)号： US07187025B2公开(公告)日： 2007-03-06
- 发明人: Yasuaki Hamada , Takeshi Kijima , Junichi Karasawa , Koji Ohashi , Eiji Natori
- 申请人： Yasuaki Hamada , Takeshi Kijima , Junichi Karasawa , Koji Ohashi , Eiji Natori
- 申请人地址： JP Tokyo
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff & Berridge, PLC
- 优先权： JP2003-091721 20030328; JP2003-302902 20030827; JP2004-002123 20040107
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A ferroelectric material for forming a ferroelectric that is described by a general formula ABO3, includes an A-site compensation component which compensates for a vacancy of an A site, and a B-site compensation component which compensates for a vacancy of a B site.
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