发明授权
- 专利标题: Semiconductor storage device
- 专利标题(中): 半导体存储设备
-
申请号: US10747400申请日: 2003-12-30
-
公开(公告)号: US07187605B2公开(公告)日: 2007-03-06
- 发明人: Takeo Takahashi
- 申请人: Takeo Takahashi
- 申请人地址: JP Tokyo
- 专利权人: Oki Electric Industry Co., Ltd.
- 当前专利权人: Oki Electric Industry Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Volentine Francos & Whitt, PLLC
- 优先权: JP2003-189403 20030701
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
A mask ROM small in circuit scale and low in consumption power has an n-type select transistor having a drain connected to a corresponding one of bit lines, a source connected to a data line, and a gate having a corresponding one of select signals input thereto. A p-type precharge transistor has a drain connected to a corresponding one of bit lines, a source connected to a power line, and a gate having a corresponding one of the select signals input thereto. Because the bit line is precharged by using a precharge transistor opposite in conductivity type to the select transistors, it is satisfactory to provide one precharge transistor for one bit line, greatly reducing the circuit scale.
公开/授权文献
- US20050003603A1 Semiconductor storage device 公开/授权日:2005-01-06