发明授权
- 专利标题： Methods of fabricating interconnects including depositing a first material in the interconnect with a thickness of angstroms and a low temperature for semiconductor components
- 专利标题（中）： 制造互连的方法包括在互连件中沉积厚度为埃的第一材料和用于半导体部件的低温
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申请号： US11028892申请日： 2005-01-03
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公开(公告)号： US07189642B2公开(公告)日： 2007-03-13
- 发明人: Kyle K. Kirby , Shuang Meng , Garo J. Derderian
- 申请人： Kyle K. Kirby , Shuang Meng , Garo J. Derderian
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/44
摘要：
In one aspect, the invention encompasses a method of fabricating an interconnect for a semiconductor component. A semiconductor substrate is provided, and an opening is formed which extends entirely through the substrate. A first material is deposited along sidewalls of the opening at a temperature of less than or equal to about 200° C. The deposition can comprise one or both of atomic layer deposition and chemical vapor deposition, and the first material can comprise a metal nitride. A solder-wetting material is formed over a surface of the first material. The solder-wetting material can comprise, for example, nickel. Subsequently, solder is provided within the opening and over the solder-wetting material.
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