- 专利标题： Semiconductor substrate surface protection method
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申请号： US10660490申请日： 2003-09-12
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公开(公告)号： US07189657B2公开(公告)日： 2007-03-13
- 发明人: Noriko Tomita , Takashi Ohsako
- 申请人： Noriko Tomita , Takashi Ohsako
- 申请人地址： JP Tokyo
- 专利权人： Oki Electric Industry Co., Ltd.
- 当前专利权人： Oki Electric Industry Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Rabin & Berdo, PC
- 优先权： JP2002-298452 20021011
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469 ; H01L21/4763
摘要：
A convenient method of depositing chemical protection material on the surface of a semiconductor substrate whereby deposition of contaminating substances after a clean surface has been obtained can be prevented and maintaining of this surface performed includes a process of depositing a high molecular straight-chain organic compound 3 onto a highly clean surface 2 of a semiconductor substrate 1 during semiconductor washing or after semiconductor washing of the semiconductor substrate.
公开/授权文献
- US20040072707A1 Semiconductor substrate surface protection method 公开/授权日：2004-04-15
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