公开(公告)号：US20070134933A1

公开(公告)日：2007-06-14

申请号：US11700889

申请日：2007-02-01

Applicant: Noriko Tomita ,  Takashi Ohsako

Inventor： Noriko Tomita ,  Takashi Ohsako

IPC: H01L21/31

CPC classification number: H01L21/02301 ,  C11D11/0047 ,  H01L21/02052 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/312

Abstract: A convenient method of depositing chemical protection material on the surface of a semiconductor substrate whereby deposition of contaminating substances after a clean surface has been obtained can be prevented and maintaining of this surface performed includes a process of depositing a high molecular straight-chain organic compound 3 onto a highly clean surface 2 of a semiconductor substrate 1 during semiconductor washing or after semiconductor washing of the semiconductor substrate.

Abstract translation: 可以防止在半导体基板的表面上沉积化学保护材料的便利方法，从而获得在清洁表面之后沉积污染物质，并且保持该表面的方法包括沉积高分子直链有机化合物3 在半导体洗涤期间或在半导体衬底的半导体清洗之后，到半导体衬底1的高度干净的表面2上。

公开(公告)号：US07189657B2

公开(公告)日：2007-03-13

申请号：US10660490

申请日：2003-09-12

Applicant: Noriko Tomita ,  Takashi Ohsako

Inventor： Noriko Tomita ,  Takashi Ohsako

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/4763

CPC classification number: H01L21/02301 ,  C11D11/0047 ,  H01L21/02052 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/312

Abstract: A convenient method of depositing chemical protection material on the surface of a semiconductor substrate whereby deposition of contaminating substances after a clean surface has been obtained can be prevented and maintaining of this surface performed includes a process of depositing a high molecular straight-chain organic compound 3 onto a highly clean surface 2 of a semiconductor substrate 1 during semiconductor washing or after semiconductor washing of the semiconductor substrate.

公开(公告)号：US07732272B2

公开(公告)日：2010-06-08

申请号：US10677221

申请日：2003-10-03

Applicant: Takashi Ohsako ,  Hirotaka Mori ,  Katsuji Yoshida

Inventor： Takashi Ohsako ,  Hirotaka Mori ,  Katsuji Yoshida

IPC: H01L21/8238

CPC classification number: H01L29/6653 ,  H01L29/6659 ,  H01L29/7833

Abstract: A method of manufacturing a semiconductor device includes a process of forming a gate electrode having a metallic silicide layer on a semiconductor substrate, a process of decreasing boundaries of grains on the surface of the metallic silicide layer, at least a portion of which is exposed, and a process of forming spacers comprising an oxide film on the side wall of the gate electrode; in this order. Thus, abnormal oxidation of the metallic silicide layer is avoided.

Abstract translation: 制造半导体器件的方法包括在半导体衬底上形成具有金属硅化物层的栅电极的工艺，其中至少一部分被暴露的金属硅化物层的表面上的晶粒边界减小的过程， 以及在栅电极的侧壁上形成包含氧化物膜的间隔物的工艺; 按此顺序 因此，避免了金属硅化物层的异常氧化。

公开(公告)号：US07514371B2

公开(公告)日：2009-04-07

申请号：US11700889

申请日：2007-02-01

Applicant: Noriko Tomita ,  Takashi Ohsako

Inventor： Noriko Tomita ,  Takashi Ohsako

IPC: H01L21/31 ,  H01L21/4763 ,  H01L21/469

CPC classification number: H01L21/02301 ,  C11D11/0047 ,  H01L21/02052 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/312

Abstract: A semiconductor substrate surface protection method for maintaining surfaces thereof clean includes providing a tank containing pure water and a chemical protection material which is a high molecular straight-chain organic compound; and immersing the semiconductor substrate in the tank to deposit the high molecular straight-chain organic compound on the semiconductor substrate for maintaining the surfaces thereof clean. This convenient method prevents deposition of contaminating substances directly onto the semiconductor substrate and enables maintaining of this contaminant-free surface at a low cost.

Abstract translation: 用于保持表面清洁的半导体衬底表面保护方法包括提供含有纯水的罐和作为高分子直链有机化合物的化学保护材料; 并将半导体衬底浸入槽中以将高分子直链有机化合物沉积在半导体衬底上，以保持其表面清洁。 这种方便的方法可以防止污染物质直接沉积在半导体衬底上，并且能够以低成本维持该无污染物的表面。

公开(公告)号：US06524968B2

公开(公告)日：2003-02-25

申请号：US09970692

申请日：2001-10-05

Applicant: Masashi Takahashi ,  Toshio Nagata ,  Yoshirou Tsurugida ,  Takashi Ohsako ,  Hirotaka Mori ,  Akihiko Ohara ,  Hidetsugu Uchida ,  Hiroaki Uchida ,  Katsuji Yoshida ,  Masahiro Takahashi

Inventor： Masashi Takahashi ,  Toshio Nagata ,  Yoshirou Tsurugida ,  Takashi Ohsako ,  Hirotaka Mori ,  Akihiko Ohara ,  Hidetsugu Uchida ,  Hiroaki Uchida ,  Katsuji Yoshida ,  Masahiro Takahashi

IPC: H01L2131

CPC classification number: H01L21/28211 ,  H01L21/02238 ,  H01L21/02337 ,  H01L21/02359 ,  H01L21/31662

Abstract: A method for forming an insulating film is provided which is capable of inhibiting spontaneous growth of a silicon oxide film formed on a silicon substrate and an increase in thickness of a film caused by exposure to an atmosphere. After having allowed a silicon dioxide layer with a predetermined thickness to grow on a surface of a silicon crystal, a surface of the silicon dioxide is exposed to organic gas containing no hydroxyl group or is exposed to ammonia gas.

Abstract translation: 提供一种形成绝缘膜的方法，其能够抑制在硅衬底上形成的氧化硅膜的自发生长和由暴露于大气中引起的膜的厚度增加。 在允许具有预定厚度的二氧化硅层在硅晶体的表面上生长之后，二氧化硅的表面暴露于不含羟基的有机气体或暴露于氨气中。