发明授权
- 专利标题： Method of manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US11009712申请日： 2004-12-13
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公开(公告)号： US07192883B2公开(公告)日： 2007-03-20
- 发明人: Tae Jung Lim , Sang Wook Park
- 申请人： Tae Jung Lim , Sang Wook Park
- 申请人地址： KR Kyungki-Do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Kyungki-Do
- 代理机构： Mayer Brown Rowe & Maw LLP
- 优先权： KR10-2004-0019479 20040322
- 主分类号： H01L21/461
- IPC分类号： H01L21/461 ; H01L21/302
摘要：
The present invention relates to a method of manufacturing a semiconductor device. A minute pattern is formed using a hard mask film of a series of a nitride film as an etch mask. Before a hard mask film removal process is performed, the step of performing given etching using an oxide film etchant is added to remove an abnormal oxide film on the nitride film. It is thus possible to effectively remove the hard mask film. Generation of voids in a pattern below the hard mask film can be also effectively prevented using BOE in which the composition ratio of HF and NH4F and an etching temperature are optimized as an oxide film etchant.
公开/授权文献
- US20050208771A1 Method of manufacturing semiconductor device 公开/授权日：2005-09-22
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