公开(公告)号：US07192883B2

公开(公告)日：2007-03-20

申请号：US11009712

申请日：2004-12-13

申请人： Tae Jung Lim ,  Sang Wook Park

发明人： Tae Jung Lim ,  Sang Wook Park

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/32139 ,  H01L21/3081 ,  H01L21/31111

摘要： The present invention relates to a method of manufacturing a semiconductor device. A minute pattern is formed using a hard mask film of a series of a nitride film as an etch mask. Before a hard mask film removal process is performed, the step of performing given etching using an oxide film etchant is added to remove an abnormal oxide film on the nitride film. It is thus possible to effectively remove the hard mask film. Generation of voids in a pattern below the hard mask film can be also effectively prevented using BOE in which the composition ratio of HF and NH4F and an etching temperature are optimized as an oxide film etchant.

摘要翻译： 本发明涉及半导体器件的制造方法。 使用一系列氮化物膜的硬掩模膜作为蚀刻掩模形成微小图案。 在进行硬掩膜剥离处理之前，添加使用氧化膜蚀刻剂进行给定蚀刻的步骤以去除氮化膜上的异常氧化膜。 因此，能够有效地除去硬掩模膜。 使用其中HF和NH 4 F的组成比和蚀刻温度作为氧化物膜蚀刻剂优化的BOE也可以有效地防止在硬掩模膜下方形成图案中的空隙。