发明授权
US07193715B2 Measurement of overlay using diffraction gratings when overlay exceeds the grating period
有权
当覆盖层超过光栅周期时，使用衍射光栅测量覆盖层
- 专利标题： Measurement of overlay using diffraction gratings when overlay exceeds the grating period
- 专利标题（中）： 当覆盖层超过光栅周期时，使用衍射光栅测量覆盖层
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申请号： US10714460申请日： 2003-11-14
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公开(公告)号： US07193715B2公开(公告)日： 2007-03-20
- 发明人: Rodney Smedt , Abdurrahman Sezginer , Hsu-Ting Huang
- 申请人： Rodney Smedt , Abdurrahman Sezginer , Hsu-Ting Huang
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Stallman & Pollock LLP
- 主分类号： G01B11/00
- IPC分类号： G01B11/00 ; G03F9/00 ; G03C5/00 ; H01L23/544 ; H01L21/76
摘要：
A method for measuring overlay in semiconductor wafers includes obtaining diffraction based and imaging based measurements of the same target. The two separate measurements are then combined in a way that is consistent to both measurements to obtain an overlay measurement that has high precision and large range.
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