Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit

Invention Grant

US07195964B2 Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit 有权

Title translation: 在栅极表面上制造电介质以使栅极与集成电路的另一元件绝缘

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Patent Title: Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit
Patent Title (中): 在栅极表面上制造电介质以使栅极与集成电路的另一元件绝缘
Application No.: US11182875

Application Date: 2005-07-14
Publication No.: US07195964B2

Publication Date: 2007-03-27
Inventor: Yi Ding
Applicant: Yi Ding
Applicant Address: TW Hsin Chu
Assignee: ProMOS Technologies Inc.
Current Assignee: ProMOS Technologies Inc.
Current Assignee Address: TW Hsin Chu
Agency: MacPherson Kwok Chen & Heid LLP
Agent Michael Shenker
Main IPC: H01L21/8238
IPC: H01L21/8238

Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit

Abstract:

A gate dielectric (150) for a gate (160) is formed by thermal oxidation simultaneously with as a dielectric on a surface of another gate (140). The dielectric thickness on the other gate is controlled by the dopant concentration in the other gate. The gates may be gates of different MOS transistors, or a select gate and a floating gate of a memory cell. Other features are also provided.

Abstract(Chinese):

用于栅极（160）的栅极电介质（150）通过热氧化同时作为另一栅极（140）的表面上的电介质形成。另一个栅极上的电介质厚度由另一个栅极中的掺杂剂浓度控制。栅极可以是不同MOS晶体管的栅极，或存储单元的选择栅极和浮置栅极。还提供其他功能。

Public/Granted literature

US20050272205A1 Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit Public/Granted day:2005-12-08

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS